Produttore elettronici | Il numero della parte | Scheda tecnica | Spiegazioni elettronici |
IXYS Corporation |
IXBH16N170
|
182Kb / 5P |
High Voltage, High Gain BIMOSFETTM Monolithic Bipolar MOS Transistor
|
IXBR42N170
|
175Kb / 5P |
High Voltage, High Gain BIMOSFETTM Monolithic Bipolar MOS Transistor
|
IXBA16N170AHV
|
168Kb / 2P |
High Voltage, High Gain BIMOSFETTM Monolithic Bipolar MOS Transistor
|
IXBH24N170
|
181Kb / 5P |
High Voltage, High Gain BIMOSFETTM Monolithic Bipolar MOS Transistor
|
IXBN42N170A
|
206Kb / 6P |
High Voltage, High Gain BIMOSFETTM Monolithic Bipolar MOS Transistor
|
IXBF32N300
|
201Kb / 5P |
High Voltage, High Gain BIMOSFETTM Monolithic Bipolar MOS Transistor
|
IXBH20N300
|
180Kb / 5P |
High Voltage, High Gain BIMOSFETTM Monolithic Bipolar MOS Transistor
|
IXBA14N300HV
|
365Kb / 6P |
High Voltage, High Gain BIMOSFETTM Monolithic Bipolar MOS Transistor
|
IXBH12N300
|
183Kb / 5P |
High Voltage, High Gain BIMOSFETTM Monolithic Bipolar MOS Transistor
|
IXBK55N300
|
221Kb / 6P |
High Voltage, High Gain BiMOSFETTM Monolithic Bipolar MOS Transistor
|
IXBH42N170
|
581Kb / 5P |
High Voltage, High Gain BIMOSFETTM Monolithic Bipolar MOS Transistor
|