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TP2535N3 Scheda tecnica (PDF) - Supertex, Inc

TP2535N3 Datasheet PDF - Supertex, Inc
Il numero della parte TP2535N3
Scarica  TP2535N3 Scarica

Grandezza file   481.01 Kbytes
Page   4 Pages
Produttore elettronici  SUTEX [Supertex, Inc]
Homepage  http://www.supertex.com
Logo SUTEX - Supertex, Inc
Spiegazioni elettronici P-Channel Enhancement-Mode Vertical DMOS FETs

TP2535N3 Datasheet (PDF)

Go To PDF Page Scarica Scheda tecnica
TP2535N3 Datasheet PDF - Supertex, Inc

Il numero della parte TP2535N3
Scarica  TP2535N3 Click to download

Grandezza file   481.01 Kbytes
Page   4 Pages
Produttore elettronici  SUTEX [Supertex, Inc]
Homepage  http://www.supertex.com
Logo SUTEX - Supertex, Inc
Spiegazioni elettronici P-Channel Enhancement-Mode Vertical DMOS FETs

TP2535N3 Scheda tecnica (HTML) - Supertex, Inc

TP2535N3 Datasheet HTML 1Page - Supertex, Inc TP2535N3 Datasheet HTML 2Page - Supertex, Inc TP2535N3 Datasheet HTML 3Page - Supertex, Inc TP2535N3 Datasheet HTML 4Page - Supertex, Inc

TP2535N3 Dettagli del prodotto

Low Threshold DMOS Technology
These low threshold enhancement-mode (normally-off) transistors utilize a vertical DMOS structure and Supertexs well-proven silicon-gate manufacturing process. This combination produces devices with the power handling capabilities of bipolar transistors and with the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, these devices are free from thermal runaway and thermally-induced secondary breakdown.

Features
❏ Low threshold — -2.4V max.
❏ High input impedance
❏ Low input capacitance — 125pF max.
❏ Fast switching speeds
❏ Low on resistance
❏ Free from secondary breakdown
❏ Low input and output leakage
❏ Complementary N- and P-channel devices

Applications
❏ Logic level interfaces – ideal for TTL and CMOS
❏ Solid state relays
❏ Battery operated systems
❏ Photo voltaic drives
❏ Analog switches
❏ General purpose line drivers
❏ Telecom switches




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