Produttore elettronici | Il numero della parte | Scheda tecnica | Spiegazioni elettronici |
NEC |
NESG2031M16
|
119Kb / 12P |
NPN SiGe RF TRANSISTOR FOR LOW NOISE, HIGH-GAIN AMPLIFICATION 6-PIN LEAD-LESS MINIMOLD (M16, 1208 PKG)
|
California Eastern Labs |
NESG2021M16
|
861Kb / 11P |
NPN SiGe RF TRANSISTOR FOR LOW NOISE, HIGH-GAIN AMPLIFICATION 6-PIN LEAD-LESS MINIMOLD (M16, 1208 PKG)
|
NEC |
NESG2021M16
|
120Kb / 12P |
NPN SiGe RF TRANSISTOR FOR LOW NOISE, HIGH-GAIN AMPLIFICATION 6-PIN LEAD-LESS MINIMOLD (M16, 1208 PKG)
|
NESG2101M16
|
135Kb / 13P |
NPN SiGe RF TRANSISTOR FOR MEDIUM OUTPUT POWER AMPLIFICATION (125 mW) 6-PIN LEAD-LESS MINIMOLD (M16, 1208 PKG)
|
California Eastern Labs |
NESG3031M05-T1-A
|
673Kb / 9P |
NPN SiGe RF TRANSISTOR FOR LOW NOISE, HIGH-GAIN AMPLIFICATION FLAT-LEAD 4-PIN THIN-TYPE SUPER MINIMOLD (M05, 2012 PKG)
|
NESG210719
|
1Mb / 9P |
NPN SiGe RF TRANSISTOR FOR LOW NOISE, HIGH-GAIN Amplification 3-Pin Ultra Super Minimold (19, 1608 PKG)
|
NE66219
|
329Kb / 6P |
NPN SILICON RF TRANSISTOR FOR LOW NOISE 쨌 HIGH-GAIN AMPLIFICATION 3-PIN ULTRA SUPER MINIMOLD (19, 1608 PKG)
|
NEC |
2SC5606
|
73Kb / 7P |
NPN SILICON RF TRANSISTOR FOR LOW NOISE 쨌 HIGH-GAIN AMPLIFICATION 3-PIN ULTRA SUPER MINIMOLD (19, 1608 PKG)
|
2SC5787
|
100Kb / 22P |
NPN SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW NOISE 3-PIN LEAD-LESS MINIMOLD
|
2SC5801
|
33Kb / 1P |
NPN SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW NOISE 3-PIN LEAD-LESS MINIMOLD
|