DESCRIPTION ST2341SRG is the P-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.This high density process is especially tailored to minimize on-state resistance.These devices are particularly suited for low voltage application such as cellular phone and notebook computer power management, other battery powered circuits, and low in-line power loss are required. The product is in a very small outline surface mount package. FEATURE ● -20V/-3.2A, RDS(ON) =45mΩ (Typ.) @VGS = -4.5V ● -20V/-2.0A, RDS(ON) = 53mΩ @VGS = -2.5V ● Super high density cell design for extremely low RDS(ON) ● Exceptional on-resistance and maximum DC current capability ● SOT-23 package design
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