# isc N-Channel MOSFET Transistor MDF16N50GTH

## FEATURES

· Drain Current: I D = 16A @ T C = 25℃
· Drain-Source Voltage: V DSS = 500V (Min)
· Static Drain-Source On-Resistance: R DS(on) = 0.35Ω (Max) @ V GS = 10V
· 100% avalanche tested
· Minimum lot-to-lot variations

## APPLICATIONS

· Motor drive
· DC-DC converter
· Power switch
· Solenoid drive

## ABSOLUTE MAXIMUM RATINGS (Ta=25℃)

SYMBOL	PARAMETER	VALUE	UNIT
VDSS	Drain-Source Voltage	500	V
VGS	Gate-Source Voltage-Continuous	±30	V
ID	Drain Current-Continuous	16	A
IDM	Drain Current-Single Pulse	64	A
PD	Total Dissipation @TC=25℃	50	W
TJ	Max. Operating Junction Temperature	-55~150	℃
Tstg	Storage Temperature	-55~150	℃

## THERMAL CHARACTERISTICS

SYMBOL	PARAMETER	MAX	UNIT
Rth j-c	Thermal Resistance, Junction to Case	2.5	℃/W

## ELECTRICAL CHARACTERISTICS (TC=25℃ unless otherwise specified)

SYMBOL	PARAMETER	CONDITIONS	MIN	MAX	UNIT
V(BR)DSS	Drain-Source Breakdown Voltage	VGS=0; ID=0.25mA	500	-	V
VGS(th)	Gate Threshold Voltage	VDS=VGS; ID=0.25mA	3	5	V
RDS(on)	Drain-Source On-Resistance	VGS=10V; ID=8A	-	0.35	Ω
IGSS	Gate-Body Leakage Current	VGS= ±30V; VDS=0	-	±0.1	uA
IDSS	Zero Gate Voltage Drain Current	VDS=500V; VGS=0	-	1.0	uA
VSD	Forward On-Voltage	IS=16A; VGS=0	-	1.4	V

## IMPORTANT NOTES

· ISC reserves the right to make changes without notification.
· Products are for general electronic equipment.
· Not designed for specialized quality, reliability, hazardous environments, aerospace or medical applications. Contact ISC for these uses.
· ISC makes no warranty or assumes liability for the use of its products.