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Hello, Please ask a question about BUL310PI Datasheet
# Example questions:
➢ What is the typical dc current gain (hfe) of the bul310 when the collector current (ic) is 10ma and the collector-emitter voltage (vce) is 5v?
➢ What is the maximum collector-emitter voltage (vces) that the bul310 can withstand?
➢ How does the thermal resistance junction-to-case (rthj-case) differ between the bul310 and bul310pi?
# BUL310/BUL310PI NPN Power Transistor
## Overview
️· High voltage, fast-switching NPN power transistors.
️· Designed for lighting applications and low cost switch-mode power supplies.
️· Utilizes Multi Epitaxial Planar technology.
️· Packaged in TO-220 ISOWATT220.
## Absolute Maximum Ratings
️· Vces (Collector-Emitter Voltage): 1000V (BUL310), 500V (BUL310PI)
️· Vceo (Collector-Emitter Voltage): 500V
️· Vebo (Emitter-Base Voltage): 9V
️· Ic (Collector Current): 5A
️· Icm (Peak Collector Current): 10A
️· Ib (Base Current): 3A
️· Ptot (Total Dissipation): 5W (BUL310), 3.5W (BUL310PI) @ Tc = 25°C
️· Tstg (Storage Temperature): -65 to 150 °C
️· Tj (Junction Temperature): 150 °C
## Thermal Data
️· Rthj-case (Thermal Resistance Junction-Case): 1.65 °C/W (BUL310), 3.58 °C/W (BUL310PI)
️· Rthj-amb (Thermal Resistance Junction-Ambient): 62.5 °C/W
## Electrical Characteristics (Tcase = 25°C)
️· ICES (Collector Cut-off Current): 100µA - 500µA
️· ICEO (Collector Cut-off Current): Up to 250 µA
️· VCEO(sus) (Collector-Emitter Sustaining Voltage): 500V
️· VBE(sat) (Base-Emitter Saturation Voltage): 1V - 1.2V
️· hFE (DC Current Gain): 10
️· ts (Storage Time): 1.2µs - 1.9µs
️· tf (Fall Time): 80ns - 160ns
## Package
️· TO-220 ISOWATT220
️· Detailed mechanical dimensions are provided in the datasheet.
# BUL310/BUL310PI NPN Power Transistor
## Overview
️· High voltage, fast-switching NPN power transistors.
️· Designed for lighting applications and low cost switch-mode power supplies.
️· Utilizes Multi Epitaxial Planar technology.
️· Packaged in TO-220 ISOWATT220.
## Absolute Maximum Ratings
️· Vces (Collector-Emitter Voltage): 1000V (BUL310), 500V (BUL310PI)
️· Vceo (Collector-Emitter Voltage): 500V
️· Vebo (Emitter-Base Voltage): 9V
️· Ic (Collector Current): 5A
️· Icm (Peak Collector Current): 10A
️· Ib (Base Current): 3A
️· Ptot (Total Dissipation): 5W (BUL310), 3.5W (BUL310PI) @ Tc = 25°C
️· Tstg (Storage Temperature): -65 to 150 °C
️· Tj (Junction Temperature): 150 °C
## Thermal Data
️· Rthj-case (Thermal Resistance Junction-Case): 1.65 °C/W (BUL310), 3.58 °C/W (BUL310PI)
️· Rthj-amb (Thermal Resistance Junction-Ambient): 62.5 °C/W
## Electrical Characteristics (Tcase = 25°C)
️· ICES (Collector Cut-off Current): 100µA - 500µA
️· ICEO (Collector Cut-off Current): Up to 250 µA
️· VCEO(sus) (Collector-Emitter Sustaining Voltage): 500V
️· VBE(sat) (Base-Emitter Saturation Voltage): 1V - 1.2V
️· hFE (DC Current Gain): 10
️· ts (Storage Time): 1.2µs - 1.9µs
️· tf (Fall Time): 80ns - 160ns
## Package
️· TO-220 ISOWATT220
️· Detailed mechanical dimensions are provided in the datasheet.
| Part No. | BUL310PI |
| Manufacturer | STMICROELECTRONICS |
| Size | 88 Kbytes |
| Pages | 7 pages |
| Description | HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTORS |
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