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BUL310PI Datasheet with Chat AI
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  • # Example questions: ➢ What is the typical dc current gain (hfe) of the bul310 when the collector current (ic) is 10ma and the collector-emitter voltage (vce) is 5v?
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    ➢ How does the thermal resistance junction-to-case (rthj-case) differ between the bul310 and bul310pi?

  • Part No.BUL310PI
    ManufacturerSTMICROELECTRONICS
    Size88 Kbytes
    Pages7 pages
    DescriptionHIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTORS
    Datasheet Summary with AI

    # BUL310/BUL310PI NPN Power Transistor

    ## Overview
    ️· High voltage, fast-switching NPN power transistors.
    ️· Designed for lighting applications and low cost switch-mode power supplies.
    ️· Utilizes Multi Epitaxial Planar technology.
    ️· Packaged in TO-220 ISOWATT220.

    ## Absolute Maximum Ratings
    ️· Vces (Collector-Emitter Voltage): 1000V (BUL310), 500V (BUL310PI)
    ️· Vceo (Collector-Emitter Voltage): 500V
    ️· Vebo (Emitter-Base Voltage): 9V
    ️· Ic (Collector Current): 5A
    ️· Icm (Peak Collector Current): 10A
    ️· Ib (Base Current): 3A
    ️· Ptot (Total Dissipation): 5W (BUL310), 3.5W (BUL310PI) @ Tc = 25°C
    ️· Tstg (Storage Temperature): -65 to 150 °C
    ️· Tj (Junction Temperature): 150 °C

    ## Thermal Data

    ️· Rthj-case (Thermal Resistance Junction-Case): 1.65 °C/W (BUL310), 3.58 °C/W (BUL310PI)
    ️· Rthj-amb (Thermal Resistance Junction-Ambient): 62.5 °C/W

    ## Electrical Characteristics (Tcase = 25°C)
    ️· ICES (Collector Cut-off Current): 100µA - 500µA
    ️· ICEO (Collector Cut-off Current): Up to 250 µA
    ️· VCEO(sus) (Collector-Emitter Sustaining Voltage): 500V
    ️· VBE(sat) (Base-Emitter Saturation Voltage): 1V - 1.2V
    ️· hFE (DC Current Gain): 10
    ️· ts (Storage Time): 1.2µs - 1.9µs
    ️· tf (Fall Time): 80ns - 160ns

    ## Package
    ️· TO-220 ISOWATT220
    ️· Detailed mechanical dimensions are provided in the datasheet.

    # BUL310/BUL310PI NPN Power Transistor

    ## Overview
    ️· High voltage, fast-switching NPN power transistors.
    ️· Designed for lighting applications and low cost switch-mode power supplies.
    ️· Utilizes Multi Epitaxial Planar technology.
    ️· Packaged in TO-220 ISOWATT220.

    ## Absolute Maximum Ratings
    ️· Vces (Collector-Emitter Voltage): 1000V (BUL310), 500V (BUL310PI)
    ️· Vceo (Collector-Emitter Voltage): 500V
    ️· Vebo (Emitter-Base Voltage): 9V
    ️· Ic (Collector Current): 5A
    ️· Icm (Peak Collector Current): 10A
    ️· Ib (Base Current): 3A
    ️· Ptot (Total Dissipation): 5W (BUL310), 3.5W (BUL310PI) @ Tc = 25°C
    ️· Tstg (Storage Temperature): -65 to 150 °C
    ️· Tj (Junction Temperature): 150 °C

    ## Thermal Data
    ️· Rthj-case (Thermal Resistance Junction-Case): 1.65 °C/W (BUL310), 3.58 °C/W (BUL310PI)
    ️· Rthj-amb (Thermal Resistance Junction-Ambient): 62.5 °C/W

    ## Electrical Characteristics (Tcase = 25°C)
    ️· ICES (Collector Cut-off Current): 100µA - 500µA
    ️· ICEO (Collector Cut-off Current): Up to 250 µA
    ️· VCEO(sus) (Collector-Emitter Sustaining Voltage): 500V
    ️· VBE(sat) (Base-Emitter Saturation Voltage): 1V - 1.2V
    ️· hFE (DC Current Gain): 10
    ️· ts (Storage Time): 1.2µs - 1.9µs
    ️· tf (Fall Time): 80ns - 160ns

    ## Package
    ️· TO-220 ISOWATT220
    ️· Detailed mechanical dimensions are provided in the datasheet.

    Part No.BUL310PI
    ManufacturerSTMICROELECTRONICS
    Size88 Kbytes
    Pages7 pages
    DescriptionHIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTORS
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