# UTC 2SD1609 NPN Epitaxial Silicon Transistor

## Features
· Low frequency high voltage amplifier
· NPN Epitaxial Planar Transistor

## Absolute Maximum Ratings (Ta=25°C)
· Collector-Base Voltage (BVCBO): 160 V
· Collector-Emitter Voltage (BVCEO): 160 V
· Emitter-Base Voltage (BVEBO): 5 V
· Collector Current (Ic): 100 mA
· Total Power Dissipation (Ptot): 1.25 W
· Junction Temperature (Tj): 150 °C
· Storage Temperature (Tstg): -50 to 150 °C

## Electrical Characteristics (Ta=25°C)
· Collector-Base Voltage (BVCBO) (IC=10µA): 160 V
· Collector-Emitter Voltage (BVCEO) (IC=1mA): 160 V
· Emitter-Base Voltage (BVEBO) (IE=10µA): 5 V
· Collector Cut-off Current (ICBO) (VCB=140V): 10 µA

· DC Current Gain (hFE1) (VCE=5V, Ic=10mA): 60-320 (Rank dependent)
· DC Current Gain (hFE2) (VCE=5V, Ic=1mA): 30
· Collector-Emitter Saturation Voltage (VCE(sat)) (Ic=30mA, IB=3mA): 2 V
· Base-Emitter On Voltage (VBE(on)) (VCE=5V, Ic=10mA): 1.5 V
· Current Gain Bandwidth Product (fT) (VCE=5V,Ic=10mA): 145 MHz
· Output Capacitance (Cob) (VCB=10V, f=1MHz): 3.8 pF

## hFE1 Classification
· Rank B: 60-120
· Rank C: 100-200
· Rank D: 160-320

## Pin Configuration
· 1: Emitter
· 2: Collector
· 3: Base