# isc N-Channel MOSFET Transistor FQD6N40C

## Features

· Drain Current: ID = 4.5A @ TC = 25℃
· Drain-Source Voltage: V DSS = 400V (Min)
· Static Drain-Source On-Resistance: RDS(on) = 1Ω (Max) @ VGS = 10V

## Applications

· Motor drive
· DC-DC converter
· Power switch
· Solenoid drive

## Absolute Maximum Ratings (Ta=25℃)

SYMBOL	PARAMETER	VALUE	UNIT
VDSS	Drain-Source Voltage	400	V
VGS	Gate-Source Voltage-Continuous	±30	V
ID	Drain Current-Continuous	4.5	A
IDM	Drain Current-Single Pluse	18	A
PD	Total Dissipation @TC=25℃	48	W
TJ	Max. Operating Junction Temperature	150	℃
Tstg	Storage Temperature	-55~150	℃

## Thermal Characteristics

SYMBOL	PARAMETER	MAX	UNIT
Rth j-c	Thermal Resistance, Junction to Case	2.6	℃/W

## Electrical Characteristics (TC=25℃ unless otherwise specified)

SYMBOL	PARAMETER	CONDITIONS	MIN	MAX	UNIT
V(BR)DSS	Drain-Source Breakdown Voltage	VGS= 0; ID= 0.25mA	400	--	V
VGS(th)	Gate Threshold Voltage	VDS= VGS; ID= 0.25mA	2.0	4.0	V
RDS(on)	Drain-Source On-Resistance	VGS= 10V; ID=2.25A	--	1	Ω
IGSS	Gate-Body Leakage Current	VGS= ±30V;VDS= 0	--	±100	nA
IDSS	Zero Gate Voltage Drain Current	VDS=400V; VGS= 0	--	1	uA
VSD	Forward On-Voltage	IS=4.5A; VGS= 0	--	1.4	V

## Disclaimer

· Intended for general electronic equipment.
· Not designed for equipment requiring specialized quality or reliability.
· No warranty or guarantee regarding suitability for particular purpose.
· ISC disclaims liability arising from application or use of products.