# iscN-Channel MOSFET Transistor FQP6N40C

## Features

️· Drain Current (ID): 6A @ TC=25℃
️· Drain-Source Voltage (VDSS): 400V (Min)
️· Static Drain-Source On-Resistance (RDS(on)): 1.0Ω (Max) @ VGS=10V

## Applications

️· Motor drive
️· DC-DC converter
️· Power switch
️· Solenoid drive

## Absolute Maximum Ratings (Ta=25℃)

SYMBOL	PARAMETER	VALUE	UNIT
VDSS	Drain-Source Voltage	400	V
VGS	Gate-Source Voltage-Continuous	±30	V
ID	Drain Current-Continuous	6	A
IDM	Drain Current-Single Pluse	24	A
PD	Total Dissipation@TC=25℃	73	W
TJ	Max. Operating Junction Temperature	150	℃
Tstg	Storage Temperature	-55~150	℃

## Thermal Characteristics

SYMBOL	PARAMETER	MAX	UNIT
Rthj-c	Thermal Resistance, Junction to Case	1.71	℃/W

## Electrical Characteristics (TC=25℃)

SYMBOL	PARAMETER	CONDITIONS	MIN	MAX	UNIT
V(BR)DSS	Drain-Source Breakdown Voltage	VGS=0;ID=0.25mA	400	--	V
VGS(th)	Gate Threshold Voltage	VDS=VGS;ID=0.25mA	2.0	4.0	V
RDS(on)	Drain-Source On-Resistance	VGS=10V;ID=3A	--	1.0	Ω
IGSS	Gate-Body Leakage Current	VGS= ±30V;VDS=0	--	±100	nA
IDSS	Zero Gate Voltage Drain Current	VDS=400V;VGS=0	--	1	uA
VSD	Forward On-Voltage	IS=6A;VGS=0	--	1.4	V

## Disclaimer

️· Intended for general electronic equipment.
️· Not designed for specialized quality/reliability equipment, hazardous environments, aerospace or medical applications.
️· No warranty or guarantee regarding suitability for any purpose.
️· ISC disclaims all liability arising from product application or use.