MJE5171 / Inchange Semiconductor Company Limited

MJE5171 Datasheet with Chat AI

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Part No.	MJE5171
Manufacturer	ISC
Size	114 Kbytes
Pages	2 pages
Description	isc Silicon PNP Power Transistors

Datasheet Summary with AI

## Thermal Characteristics

· Rth j-c (Junction to Case Thermal Resistance): 1.92 ℃/W
· Rth j-a (Junction to Ambient Thermal Resistance): 62.5 ℃/W

## Electrical Characteristics (TC=25℃)

· VCE(sat) (Collector-Emitter Saturation Voltage): -1.5V (IC= -6A, IB= -0.6A)
· VBE(on) (Base-Emitter On Voltage): -2.0V (IC= -6A, VCE= -4V)
· ICEO (Collector Cutoff Current): -0.7mA (VCE= -60V, MJE5170), -0.7mA (MJE5171), -0.7mA (MJE5172)
· ICES (Collector Cutoff Current): -0.4mA (VCE= -120V, MJE5170), -0.4mA (MJE5171), -0.4mA (MJE5172)
· IEBO (Emitter Cutoff Current): -1.0mA (VEB= -5V, IC=0)
· hFE-1 (DC Current Gain): 30-100 (IC= -0.3A, VCE= -4V)
· hFE-2 (DC Current Gain): 15 (IC= -3A, VCE= -4V)
· fT (Current-Gain—Bandwidth Product): 1.0MHz (IC= -0.5A, VCE= -10V, ftest= 1.0MHz)

## Website

· www.iscsemi.cn

# MJE5170/5171/5172 PNP Power Transistors

## General Description

· Complementary to MJE5180/5181/5182
· Applications: General purpose amplifier and switching applications.
· Collector-Emitter Sustaining Voltage: V CEO(SUS) = -120V (MJE5170), -140V (MJE5171), -160V (MJE5172)

## Absolute Maximum Ratings

· VCBO (Collector-Base Voltage): -120V (MJE5170), -140V (MJE5171), -160V (MJE5172)
· VCEO (Collector-Emitter Voltage): -120V (MJE5170), -140V (MJE5171), -160V (MJE5172)
· VEBO (Emitter-Base Voltage): -5V
· IC (Collector Current - Continuous): -6A
· ICM (Collector Current - Peak): -10A
· IB (Base Current - Continuous): -2A
· PC (Collector Power Dissipation): 65W (at TC=25℃), 2W (at Ta=25℃)
· TJ (Junction Temperature): 150℃
· Tstg (Storage Temperature Range): -65~150℃

## Thermal Characteristics

· Rth j-c (Junction to Case Thermal Resistance): 1.92 ℃/W
· Rth j-a (Junction to Ambient Thermal Resistance): 62.5 ℃/W

## Electrical Characteristics (TC=25℃)

· VCE(sat) (Collector-Emitter Saturation Voltage): -1.5V (IC= -6A, IB= -0.6A)
· VBE(on) (Base-Emitter On Voltage): -2.0V (IC= -6A, VCE= -4V)
· ICEO (Collector Cutoff Current): -0.7mA (VCE= -60V, MJE5170), -0.7mA (MJE5171), -0.7mA (MJE5172)
· ICES (Collector Cutoff Current): -0.4mA (VCE= -120V, MJE5170), -0.4mA (MJE5171), -0.4mA (MJE5172)
· IEBO (Emitter Cutoff Current): -1.0mA (VEB= -5V, IC=0)
· hFE-1 (DC Current Gain): 30-100 (IC= -0.3A, VCE= -4V)
· hFE-2 (DC Current Gain): 15 (IC= -3A, VCE= -4V)
· fT (Current-Gain—Bandwidth Product): 1.0MHz (IC= -0.5A, VCE= -10V, ftest= 1.0MHz)

## Website

· www.iscsemi.cn