HTP4A60 / SHANTOU HUASHAN ELECTRONIC DEVICES CO.,LTD

HTP4A60 Datasheet with Chat AI

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Part No.	HTP4A60
Manufacturer	HUASHAN
Size	176 Kbytes
Pages	3 pages
Description	NON INSULATED TYPE TRIAC (TO-220 PACKAGE)

Datasheet Summary with AI

## Electrical Characteristics (Ta=25℃)
️· Repetitive Peak Off-state Current (IDRM): 1.0 mA (VD=VDRM, Single Phase, Half Wave, TJ=125℃)
️· Peak On-state Voltage (VTM): 1.6 V (IT=6A, Inst. Measurement)
️· Gate Trigger Currents (I+GT1, I-GT1, I-GT3): 20 mA (VD=6V, RL=10 ohm)
️· Gate Trigger Voltages (V+GT1, V-GT1, V-GT3): 1.5 V (VD=6V, RL=10 ohm)
️· Non-trigger Gate Voltage (VGD): 0.2 V (TJ=125℃, VD=1/2VDRM)
️· Critical dv/dt: 5.0 V/µS (TJ=125℃, VD=2/3VDRM)
️· Holding Current (IH): 5.0 mA
️· Thermal Resistance (Rth(j-c)): 2.8 ℃/W (Junction to case)

Performance Curves
️· Includes graphs for Gate Characteristics, On-State Voltage, Gate Trigger Voltage vs. Junction Temperature, On-State Current vs. Power Dissipation, On-State Current vs. Allowable Case Temperature, Surge On-State Current Rating, Gate Trigger Current vs. Junction Temperature, Transient Thermal Impedance, and Gate Trigger Characteristics Test Circuit.

# HTP4A60 Triac

## Features
️· Repetitive Peak Off-State Voltage: 600V
️· R.M.S On-state Current: 4A
️· High Commutation dv/dt

## General Description
Suitable for AC switching, phase control (heater, motor, lighting), and static switching relay applications.

## Absolute Maximum Ratings (Ta=25℃)
️· Storage Temperature: -40~125℃
️· Operating Junction Temperature: -40~125℃
️· Peak Gate Power Dissipation: 3W
️· Repetitive Peak Off-State Voltage: 600V
️· R.M.S On-state Current (Ta=66℃): 4.0A
️· Peak Gate Voltage: 7.0V
️· Peak Gate Current: 0.5A
️· Surge On-state Current (One Cycle): 30/33A

## Electrical Characteristics (Ta=25℃)
️· Repetitive Peak Off-state Current (IDRM): 1.0 mA (VD=VDRM, Single Phase, Half Wave, TJ=125℃)
️· Peak On-state Voltage (VTM): 1.6 V (IT=6A, Inst. Measurement)
️· Gate Trigger Currents (I+GT1, I-GT1, I-GT3): 20 mA (VD=6V, RL=10 ohm)
️· Gate Trigger Voltages (V+GT1, V-GT1, V-GT3): 1.5 V (VD=6V, RL=10 ohm)
️· Non-trigger Gate Voltage (VGD): 0.2 V (TJ=125℃, VD=1/2VDRM)
️· Critical dv/dt: 5.0 V/µS (TJ=125℃, VD=2/3VDRM)
️· Holding Current (IH): 5.0 mA
️· Thermal Resistance (Rth(j-c)): 2.8 ℃/W (Junction to case)

Performance Curves
️· Includes graphs for Gate Characteristics, On-State Voltage, Gate Trigger Voltage vs. Junction Temperature, On-State Current vs. Power Dissipation, On-State Current vs. Allowable Case Temperature, Surge On-State Current Rating, Gate Trigger Current vs. Junction Temperature, Transient Thermal Impedance, and Gate Trigger Characteristics Test Circuit.