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Hello, Please ask a question about EMZ1 Datasheet
# Example questions:
➢ What is the maximum collector current (ic) for both the tr1 (npn) and tr2 (pnp) transistors?
➢ What is the collector-emitter saturation voltage (vce(sat)) for the tr1 (npn) transistor, and what are the test conditions for this measurement?
➢ What is the typical transition frequency (ft) for the tr2 (pnp) transistor, and under what test conditions is it measured?
| Part No. | EMZ1 |
| Manufacturer | SECOS |
| Size | 1Mb |
| Pages | 4 pages |
| Description | Silicon Epitaxial Planar |
## Summary of the Provided Datasheet Information
This document appears to be a datasheet for a dual transistor package (likely a single package containing both an NPN and PNP transistor), designated "EMZ1" by Elektronische Bauelemente. Here's a breakdown of the key information, organized for clarity.
1. General Specifications:
️· Power Dissipation: 0.15W
️· Collector Current: 150 mA
️· Collector-Base Voltage: 60 V
️· Technology: Silicon Epitaxial Planar
️· Application: Power Management (Dual Transistors)
️· Revision Date: 28-Oct-2009 Rev. B
️· Website: [http://www.SeCoSGmbH.com/](http://www.SeCoSGmbH.com/)
️· Disclaimer: Changes in specification will not be individually informed.
2. TR1 (NPN Transistor) Characteristics:
️· Absolute Maximum Ratings: (Provided in table format)
- Collector-Base Voltage (V<sub>CBO</sub>): 60V
- Collector-Emitter Voltage (V<sub>CEO</sub>): 50V
- Emitter-Base Voltage (V<sub>EBO</sub>): 7V
- Collector Current (I<sub>C</sub>): 150 mA
- Power Dissipation (P<sub>C</sub>): 0.15W
- Junction & Storage Temperature: 150°C / -55°C to 150°C
️· Electrical Characteristics: (Provided in table format)
- Breakdown Voltages (V<sub>(BR)CBO</sub>, V<sub>(BR)CEO</sub>, V<sub>(BR)EBO</sub>)
- Collector Cut-off Current (I<sub>CBO</sub>)
- Emitter Cut-off Current (I<sub>EBO</sub>)
- DC Current Gain (h<sub>FE</sub>)
- Collector-Emitter Saturation Voltage (V<sub>CE(sat)</sub>)
- Transition Frequency (f<sub>T</sub>)
- Collector Output Capacitance (C<sub>ob</sub>)
3. TR2 (PNP Transistor) Characteristics:
️· Absolute Maximum Ratings: (Provided in table format) - Similar ratings to TR1 but with negative voltage designations.
- Collector-Base Voltage (V<sub>CBO</sub>): -60V
- Collector-Emitter Voltage (V<sub>CEO</sub>): -50V
- Emitter-Base Voltage (V<sub>EBO</sub>): -6V
- Collector Current (I<sub>C</sub>): -150 mA
- Power Dissipation (P<sub>C</sub>): 0.15W
- Junction & Storage Temperature: 150°C / -55°C to 150°C
️· Electrical Characteristics: (Provided in table format) - Similar characteristics to TR1, but with appropriate signs for PNP operation.
- Breakdown Voltages (V<sub>(BR)CBO</sub>, V<sub>(BR)CEO</sub>, V<sub>(BR)EBO</sub>)
- Collector Cut-off Current (I<sub>CBO</sub>)
- Emitter Cut-off Current (I<sub>EBO</sub>)
- DC Current Gain (h<sub>FE</sub>)
- Collector-Emitter Saturation Voltage (V<sub>CE(sat)</sub>)
- Transition Frequency (f<sub>T</sub>)
- Collector Output Capacitance (C<sub>ob</sub>)
Key takeaways:
️· The EMZ1 package provides both an NPN and a PNP transistor in a single package, which can be useful for circuit simplification and size reduction.
️· The transistors have moderate power handling capabilities (150 mW) and are suitable for general-purpose switching and amplification applications.
️· The datasheet provides a relatively comprehensive set of electrical characteristics to allow for proper circuit design.
️· The Datasheet contains several tables which are best to be parsed using a script or dedicated software.
## Summary of the Provided Datasheet Information
This document appears to be a datasheet for a dual transistor package (likely a single package containing both an NPN and PNP transistor), designated "EMZ1" by Elektronische Bauelemente. Here's a breakdown of the key information, organized for clarity.
1. General Specifications:
️· Power Dissipation: 0.15W
️· Collector Current: 150 mA
️· Collector-Base Voltage: 60 V
️· Technology: Silicon Epitaxial Planar
️· Application: Power Management (Dual Transistors)
️· Revision Date: 28-Oct-2009 Rev. B
️· Website: [http://www.SeCoSGmbH.com/](http://www.SeCoSGmbH.com/)
️· Disclaimer: Changes in specification will not be individually informed.
2. TR1 (NPN Transistor) Characteristics:
️· Absolute Maximum Ratings: (Provided in table format)
- Collector-Base Voltage (V<sub>CBO</sub>): 60V
- Collector-Emitter Voltage (V<sub>CEO</sub>): 50V
- Emitter-Base Voltage (V<sub>EBO</sub>): 7V
- Collector Current (I<sub>C</sub>): 150 mA
- Power Dissipation (P<sub>C</sub>): 0.15W
- Junction & Storage Temperature: 150°C / -55°C to 150°C
️· Electrical Characteristics: (Provided in table format)
- Breakdown Voltages (V<sub>(BR)CBO</sub>, V<sub>(BR)CEO</sub>, V<sub>(BR)EBO</sub>)
- Collector Cut-off Current (I<sub>CBO</sub>)
- Emitter Cut-off Current (I<sub>EBO</sub>)
- DC Current Gain (h<sub>FE</sub>)
- Collector-Emitter Saturation Voltage (V<sub>CE(sat)</sub>)
- Transition Frequency (f<sub>T</sub>)
- Collector Output Capacitance (C<sub>ob</sub>)
3. TR2 (PNP Transistor) Characteristics:
️· Absolute Maximum Ratings: (Provided in table format) - Similar ratings to TR1 but with negative voltage designations.
- Collector-Base Voltage (V<sub>CBO</sub>): -60V
- Collector-Emitter Voltage (V<sub>CEO</sub>): -50V
- Emitter-Base Voltage (V<sub>EBO</sub>): -6V
- Collector Current (I<sub>C</sub>): -150 mA
- Power Dissipation (P<sub>C</sub>): 0.15W
- Junction & Storage Temperature: 150°C / -55°C to 150°C
️· Electrical Characteristics: (Provided in table format) - Similar characteristics to TR1, but with appropriate signs for PNP operation.
- Breakdown Voltages (V<sub>(BR)CBO</sub>, V<sub>(BR)CEO</sub>, V<sub>(BR)EBO</sub>)
- Collector Cut-off Current (I<sub>CBO</sub>)
- Emitter Cut-off Current (I<sub>EBO</sub>)
- DC Current Gain (h<sub>FE</sub>)
- Collector-Emitter Saturation Voltage (V<sub>CE(sat)</sub>)
- Transition Frequency (f<sub>T</sub>)
- Collector Output Capacitance (C<sub>ob</sub>)
Key takeaways:
️· The EMZ1 package provides both an NPN and a PNP transistor in a single package, which can be useful for circuit simplification and size reduction.
️· The transistors have moderate power handling capabilities (150 mW) and are suitable for general-purpose switching and amplification applications.
️· The datasheet provides a relatively comprehensive set of electrical characteristics to allow for proper circuit design.
️· The Datasheet contains several tables which are best to be parsed using a script or dedicated software.
| Part No. | EMZ1 |
| Manufacturer | SECOS |
| Size | 1Mb |
| Pages | 4 pages |
| Description | Silicon Epitaxial Planar |
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