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Part No.	SF20A200HCI-1
Manufacturer	KODENSHI
Size	258 Kbytes
Pages	5 pages
Description	200V, 20A ULTRAFAST DUAL RECTIFIERS

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# SF20A200HCI

## Ultrafast Recovery Rectifier

200V, 20A ULTRAFAST DUAL RECTIFIERS

#### Features

️· Low forward voltage drop and leakage current
️· Ultrafast reverse recovery time (trr<30ns)
️· Low power loss and high efficiency
️· Dual common cathode rectifier construction
️· Lead-free and RoHS compliant

#### Applications

️· Switching power supply
️· Power inverters
️· Free-wheeling diode
️· Power conversion system
️· Motor drives

#### Description

The SF20A200HCI is an ultrafast rectifier with a low forward voltage drop and reverse recovery time (trr<30ns). It’s intended for free-wheeling, clamping rectifier applications.

#### Ordering Information

Device Marking Code Package Packaging

SF20A200HCI SF20A200H TO-3P Tube

#### Marking Information

️· AUK: Manufacture Logo
️· Δ: Control Code
️· YMDD: Date Code (Y=Year, M=Month, DD=Day)
️· SF20A200H: Specific Device Code

#### Product Characteristics

Symbol Value Unit

IF(AV) 2 X 10A A

VRRM 200V V

VFM at 125℃ 0.88V V

trr 30ns ns

#### Absolute Maximum Ratings

Characteristic Symbol Value Unit

Maximum repetitive reverse voltage VRRM 200 V

Maximum working peak reverse voltage VRWM

Maximum DC blocking voltage VR

Maximum average forward rectified current (per diode) IF(AV) 10 A

Maximum average forward rectified current (total device) 20 A

Peak forward surge current (8.3ms, single half sine-wave) IFSM 120 A

Storage temperature range Tstg -45 to +150 ℃

Maximum operating junction temperature Tj 150 ℃

#### Thermal Characteristics

Characteristic Symbol Value Unit

Maximum thermal resistance (junction to case, per diode) Rth(j-c) 2.5 ℃/W

Maximum thermal resistance (junction to case, total device) 2.0 ℃/W

#### Electrical Characteristics (Per Diode)

Characteristic Symbol Test Condition Min Typ Max Unit

Peak forward voltage drop VFM IFM = 10A, Tj=25℃ - - 0.98 V

Peak forward voltage drop VFM IFM = 10A, Tj=125℃ - - 0.88 V

Reverse leakage current IRM VR = VRRM, Tj=25℃ - - 25 uA

Reverse leakage current IRM VR = VRRM, Tj=125℃ - - 500 uA

Reverse recovery time trr IF = 1A, di/dt =-100 A/us - - 30 ns

Junction capacitance Cj VR = 4VDC, f=1MHz - 150 - pF

*Note: (1) Pulse test : t P ≤380us, Duty cycle≤2%*

Characteristic	Symbol	Value	Unit
Maximum repetitive reverse voltage	VRRM	200	V
Maximum working peak reverse voltage	VRWM
Maximum DC blocking voltage	VR
Maximum average forward rectified current (per diode)	IF(AV)	10	A
Maximum average forward rectified current (total device)		20	A
Peak forward surge current (8.3ms, single half sine-wave)	IFSM	120	A
Storage temperature range	Tstg	-45 to +150	℃
Maximum operating junction temperature	Tj	150	℃

Characteristic	Symbol	Value	Unit
Maximum thermal resistance (junction to case, per diode)	Rth(j-c)	2.5	℃/W
Maximum thermal resistance (junction to case, total device)		2.0	℃/W

Characteristic	Symbol	Test Condition	Min	Typ	Max	Unit
Peak forward voltage drop	VFM	IFM = 10A, Tj=25℃	-	-	0.98	V
Peak forward voltage drop	VFM	IFM = 10A, Tj=125℃	-	-	0.88	V
Reverse leakage current	IRM	VR = VRRM, Tj=25℃	-	-	25	uA
Reverse leakage current	IRM	VR = VRRM, Tj=125℃	-	-	500	uA
Reverse recovery time	trr	IF = 1A, di/dt =-100 A/us	-	-	30	ns
Junction capacitance	Cj	VR = 4VDC, f=1MHz	-	150	-	pF