1. Device:

️· Type: PNP Silicon Medium Power Transistor
️· Model: 2SA94

2. Absolute Maximum Ratings (from the table):

️· Collector-Base Voltage (Vcb): -400V
️· Collector-Emitter Voltage (Vce): -400V
️· Emitter-Base Voltage (Veb): -5V
️· Collector Current (Ic): -0.2A
️· Pulsed Collector Current (Icm): -0.3A
️· Collector Dissipation (Pc): 1W
️· Junction Temperature (Tj): 150°C
️· Storage Temperature (Tstg): -55 to +150°C

3. Electrical Characteristics (at Ta = 25°C):

️· Breakdown Voltages:
- V(BR)CBO: -400V
- V(BR)CEO: -400V
- V(BR)EBO: -5V
️· Leakage Currents:
- ICBO: -100nA (max)
- ICEO: -5µA (max)
- IEBO: -100nA (max)
️· DC Current Gain (hFE): Varies with Ic and Vce (values are provided in the table).
️· Collector-Emitter Saturation Voltage (VCE(sat)): -0.2V to -0.3V (depending on Ic and Ib).
️· Base-Emitter Voltage (VBE(on)): -0.75V (at Ic = -10mA, Ib = -1mA).
️· Transition Frequency (fT): 50 MHz (at VCE = -20V, IC = -10mA).

4. Package:

️· SOT-223

5. Dimensions (SOT-223):

️· The document contains dimensions for the SOT-223 package, with values for A, B, C, D, E, F, G, H, J, K, L, and M.

6. Manufacturer/Website:

️· Elektronische Bauelemente
️· [http://www.SeCoSGmbH.com/](http://www.SeCoSGmbH.com/)

7. Document Revision:

️· 15-Dec-2014 Rev. A.