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Hello, Please ask a question about L566 Datasheet
# Example questions:
➢ What is the typical recovery time (trr) for this diode at a junction temperature (tvj) of 100°c and a rate of change of forward current (-dif/dt) of 40 a/µs, based on the provided data?
➢ What is the typical transient thermal resistance junction to case (zthjc) value, as indicated in the document?
➢ What are the three forward current values (if) used when characterizing the dynamic parameters qr and irm?
1. General Information & Key Parameters:
️· Device Type: Power Semiconductor Device (likely a diode or thyristor based on the data)
️· Repetitive Peak Reverse Voltage (VRRM): Not explicitly stated.
️· Average Forward Current (IF(AV)): Not explicitly stated.
️· Maximum Forward Current (IFM): Not explicitly stated.
️· Package: DWLP55-12, VUE1 (likely package designations, needs further cross-referencing for mechanical details)
️· Datasheet Revision: 2 - 2
2. Electrical Characteristics (Important Values - Partial Listing, Requires Full Table for Comprehensive Understanding):
️· Dynamic Parameters (from Fig. 4): Shows the relationship between *Qr* (Reverse Recovery Charge) and *IRM* (Reverse Recovery Current) versus *TVJ* (Junction Temperature). This is important for high-frequency switching applications.
️· Recovery Time (from Fig. 5): Shows the relationship between *trr* (Recovery time) versus *diF/dt* (Rate of Current Change) and *TVJ*. Lower recovery time is better for switching efficiency.
️· Typical Transient Thermal Resistance (from Fig. 7): Shows how junction temperature changes over time, important for thermal management.
3. Thermal Characteristics:
️· ZthJC: Thermal resistance junction-to-case (from Fig. 6). Key for calculating the temperature rise in the device. (Specific value listed within the figure but not directly stated in text)
️· *KF* - Heat transfer coefficient. Value varies depending on the current and device junction temperature
4. Figures (Summarized Importance):
️· Fig. 2-6: Show typical values for dynamic parameters (Qr, IRM, trr).
️· Fig. 4: Dynamic parameters, *Qr*, *IRM* versus *TVJ*.
️· Fig. 5: Recovery time *trr* versus *diF/dt* and *TVJ*.
️· Fig. 7: Transient thermal resistance junction to case (ZthJC).
Important Notes & Limitations:
️· Incomplete Data: This is a *partial* datasheet. Key parameters like VRRM, IF(AV), IFM are not explicitly listed. A complete datasheet is needed for a comprehensive understanding.
️· "Typical" Values: The figures provide "typical" values. Actual device performance may vary.
️· Package Specifics: Package DWLP55-12, and VUE1 require further reference for mechanical dimensions and lead characteristics.
️· Datasheet Language: The datasheet uses specialized terminology common in power electronics.
1. General Information & Key Parameters:
️· Device Type: Power Semiconductor Device (likely a diode or thyristor based on the data)
️· Repetitive Peak Reverse Voltage (VRRM): Not explicitly stated.
️· Average Forward Current (IF(AV)): Not explicitly stated.
️· Maximum Forward Current (IFM): Not explicitly stated.
️· Package: DWLP55-12, VUE1 (likely package designations, needs further cross-referencing for mechanical details)
️· Datasheet Revision: 2 - 2
2. Electrical Characteristics (Important Values - Partial Listing, Requires Full Table for Comprehensive Understanding):
️· Dynamic Parameters (from Fig. 4): Shows the relationship between *Qr* (Reverse Recovery Charge) and *IRM* (Reverse Recovery Current) versus *TVJ* (Junction Temperature). This is important for high-frequency switching applications.
️· Recovery Time (from Fig. 5): Shows the relationship between *trr* (Recovery time) versus *diF/dt* (Rate of Current Change) and *TVJ*. Lower recovery time is better for switching efficiency.
️· Typical Transient Thermal Resistance (from Fig. 7): Shows how junction temperature changes over time, important for thermal management.
3. Thermal Characteristics:
️· ZthJC: Thermal resistance junction-to-case (from Fig. 6). Key for calculating the temperature rise in the device. (Specific value listed within the figure but not directly stated in text)
️· *KF* - Heat transfer coefficient. Value varies depending on the current and device junction temperature
4. Figures (Summarized Importance):
️· Fig. 2-6: Show typical values for dynamic parameters (Qr, IRM, trr).
️· Fig. 4: Dynamic parameters, *Qr*, *IRM* versus *TVJ*.
️· Fig. 5: Recovery time *trr* versus *diF/dt* and *TVJ*.
️· Fig. 7: Transient thermal resistance junction to case (ZthJC).
Important Notes & Limitations:
️· Incomplete Data: This is a *partial* datasheet. Key parameters like VRRM, IF(AV), IFM are not explicitly listed. A complete datasheet is needed for a comprehensive understanding.
️· "Typical" Values: The figures provide "typical" values. Actual device performance may vary.
️· Package Specifics: Package DWLP55-12, and VUE1 require further reference for mechanical dimensions and lead characteristics.
️· Datasheet Language: The datasheet uses specialized terminology common in power electronics.
| Part No. | L566 |
| Manufacturer | IXYS |
| Size | 54 Kbytes |
| Pages | 2 pages |
| Description | Three Phase Rectifier Bridge with Fast Recovery Epitaxial Diodes (FRED) |
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