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Hello, Please ask a question about 2SD669 Datasheet
# Example questions:
➢ What are the three different hfe ranges and their corresponding classifications (b, c, and d)?
➢ What are the recommended preheating temperature and duration for wave soldering according to the datasheet?
➢ What are the absolute maximum ratings for collector-base voltage (vcbo), collector-emitter voltage (vceo), and junction temperature (tj)?
| Part No. | 2SD669 |
| Manufacturer | FOSHAN |
| Size | 1,019 Kbytes |
| Pages | 6 pages |
| Description | Silicon NPN transistor in a TO-126 Plastic Package. |
## 2SD669A Transistor Datasheet Summary
1. General Description:
️· Type: NPN Silicon Power Transistor
️· Package: TO-126 Plastic Package
️· Application: Low-frequency power amplification.
️· Complementary Transistor: 2SB649A (Forms a complementary pair)
2. Key Features and Characteristics:
️· hFE Range: 60 - 320 (at specified collector current and voltage)
️· VCBO (Collector-Base Voltage): 180V
️· VCEO (Collector-Emitter Voltage): 120V (2SD669A); 160V (2SB649A)
️· VEBO (Emitter-Base Voltage): 5.0V
️· IC (Collector Current): 1.5A (Continuous)
️· ICP (Peak Collector Current): 3.0A
️· PC (Collector Power Dissipation): 1.0W (at specified conditions)
️· Tj (Junction Temperature): 150 °C
️· Tstg (Storage Temperature Range): -55 to 150 °C
3. Electrical Characteristics (Highlights):
️· Collector Cut-off Current (ICBO): 10μA (Important for leakage)
️· VBE (Base-Emitter Voltage): 1.5V (approximate)
️· VCE(sat) (Collector-Emitter Saturation Voltage): ~1.0V (at specified conditions)
️· fT (Transition Frequency): 140 MHz (indicates frequency response capability)
️· Cob (Collector Output Capacitance): 14 pF (influences high-frequency performance)
4. Marking and Identification:
️· BR: Company Code (not specified, manufacturer-dependent)
️· D669: Transistor Model Number
️· B: Represents the hFE classification range (60-320)
️· : Lot Number Code (used for tracking manufacturing batches)
5. Packaging Information:
️· Bulk Packaging: 500 transistors per package, organized into larger units.
️· Tube Packaging: 65 transistors per tube.
6. Soldering Information
️· Temperature profiles are specified for lead-free soldering processes.
️· Tests are performed to ensure reliability when subjected to heat.
Important Notes:
️· This is a summarized overview. Refer to the full datasheet for complete specifications and detailed operating conditions.
️· The datasheet provides electrical test conditions that are essential for interpreting the values provided. Deviations from these conditions can affect performance.
️· Complementary transistor (2SB649A) is used in push-pull amplifier circuits.
## 2SD669A Transistor Datasheet Summary
1. General Description:
️· Type: NPN Silicon Power Transistor
️· Package: TO-126 Plastic Package
️· Application: Low-frequency power amplification.
️· Complementary Transistor: 2SB649A (Forms a complementary pair)
2. Key Features and Characteristics:
️· hFE Range: 60 - 320 (at specified collector current and voltage)
️· VCBO (Collector-Base Voltage): 180V
️· VCEO (Collector-Emitter Voltage): 120V (2SD669A); 160V (2SB649A)
️· VEBO (Emitter-Base Voltage): 5.0V
️· IC (Collector Current): 1.5A (Continuous)
️· ICP (Peak Collector Current): 3.0A
️· PC (Collector Power Dissipation): 1.0W (at specified conditions)
️· Tj (Junction Temperature): 150 °C
️· Tstg (Storage Temperature Range): -55 to 150 °C
3. Electrical Characteristics (Highlights):
️· Collector Cut-off Current (ICBO): 10μA (Important for leakage)
️· VBE (Base-Emitter Voltage): 1.5V (approximate)
️· VCE(sat) (Collector-Emitter Saturation Voltage): ~1.0V (at specified conditions)
️· fT (Transition Frequency): 140 MHz (indicates frequency response capability)
️· Cob (Collector Output Capacitance): 14 pF (influences high-frequency performance)
4. Marking and Identification:
️· BR: Company Code (not specified, manufacturer-dependent)
️· D669: Transistor Model Number
️· B: Represents the hFE classification range (60-320)
️· : Lot Number Code (used for tracking manufacturing batches)
5. Packaging Information:
️· Bulk Packaging: 500 transistors per package, organized into larger units.
️· Tube Packaging: 65 transistors per tube.
6. Soldering Information
️· Temperature profiles are specified for lead-free soldering processes.
️· Tests are performed to ensure reliability when subjected to heat.
Important Notes:
️· This is a summarized overview. Refer to the full datasheet for complete specifications and detailed operating conditions.
️· The datasheet provides electrical test conditions that are essential for interpreting the values provided. Deviations from these conditions can affect performance.
️· Complementary transistor (2SB649A) is used in push-pull amplifier circuits.
| Part No. | 2SD669 |
| Manufacturer | FOSHAN |
| Size | 1,019 Kbytes |
| Pages | 6 pages |
| Description | Silicon NPN transistor in a TO-126 Plastic Package. |
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