| Produttore elettronici | Il numero della parte | Scheda tecnica | Spiegazioni elettronici |

New Jersey Semi-Conduct...
|
MCC56-12IO1B |
226Kb/3P |
Thyristor for line frequency |
| 2SC2464 |
91Kb/1P |
Characteristics for FPAK Transistors |
| BLU20 |
49Kb/1P |
Designed for Class C |
| 2N3244 |
181Kb/2P |
PNP SILICON, TRANSISTORS FOR MEDIUM-CURRENT |
| 1N5711 |
124Kb/1P |
Schottky Barrier Diodes for General Purpose Applications |
| MRF148A |
84Kb/2P |
Designed for power amplifier applications in industrial |
| BDY87 |
134Kb/2P |
NPN Darlington stages for AF and switching applications |
| 2SC3604 |
198Kb/2P |
NPN EPITAXIAL SILICON TRANSISTOR FOR MICROWAVE LOW-NOISE AMPLIFICATION |
| 2N398 |
131Kb/1P |
PNP germanium transistor for high-voltage, audio-frequency applications |
| MRF10502 |
76Kb/2P |
Designed for 1025-1150 MHz pulse common base amplifier |
| C6 |
84Kb/1P |
For High Volume Light Industrial, Computer, and Consumer Applications |
| C611 |
84Kb/1P |
For High Volume Light Industrial, Computer, and Consumer Applications |
| 1N6103A |
89Kb/1P |
HIGH SURGE CAPACITY PROVIDES TRANSIENT PROTECTION FOR MOST CRITICAL CIRCUITS |
| 1N6461 |
80Kb/1P |
HIGH SURGE CAPACITY PROVIDES TRANSIENT PROTECTION FOR MOST CRITICAL CIRCUITS. |
| 2N1416 |
96Kb/1P |
PNP, Medium power, alloy junction transistors for audio output applications |
| AD149 |
153Kb/2P |
PNP Transistors for AF power stages up to 20 W |
| IR413 |
474Kb/2P |
High -voltage NPN silicon transistors designed for medium-to-high- voltage inverters |
| 2N1671A |
159Kb/1P |
intended for general purpose industrial applications where circuit economy is of primary importance |
| 2SC1940 |
123Kb/2P |
The 2SC1940 is designed for use in driver stages of audio frequency amplifiers |
| 2N1651 |
133Kb/1P |
DAP transistors are de-signed for efficient high current switching at high frequencies |