| Produttore elettronici | Il numero della parte | Scheda tecnica | Spiegazioni elettronici |

WOLFSPEED, INC.
|
CGHV96050F2 |
1Mb/13P |
50 W, 7.9 - 9.6 GHz, 50-ohm, Input/Output Matched GaN HEMT Rev. 3.5, 2022-12-13 |
| CGHV96050F1 |
1Mb/13P |
50 W, 7.9 - 9.6 GHz, 50-ohm, Input/Output Matched GaN HEMT Rev. 2.3, 2022-12-13 |
| CGHV50200F |
1Mb/15P |
200 W, 4.4 - 5.0 GHz, 50-Ohm Input/Output Matched, GaN HEMT Rev. 3.2, 2022-12-8 |
| CGHV96130F |
1Mb/13P |
130 W, 8.4 - 9.6 GHz, 50-ohm, Input/Output Matched GaN HEMT Rev. 2.0, 2022-8-25 |
| CGHV96100F2 |
1Mb/13P |
100 W, 8.4 - 9.6 GHz, 50-ohm, Input/Output Matched GaN HEMT Rev. 3.2, 2022-12-8 |
| CGHV38375F |
1Mb/22P |
400 W, 2.75 - 3.75 GHz, Internally-Matched, GaN-on-Silicon Carbide Transistor (IM-FET) Rev. 1.0, 2022-10-12 |
| CGHV59350 |
3Mb/14P |
350 W, 5.2 - 5.9 GHz, 50-Ohm Input/Output Matched, GaN HEMT for C-Band Radar Systems Rev. 1.6, 2023-05-24 |
| CGH35240 |
1Mb/12P |
240 W, 3.1-3.5 GHz, 50-ohm Input/Output Matched, GaN HEMT for S-Band Radar Systems Rev. 4.0, 2022-6-28 |
| CGHV31500F |
808Kb/11P |
500 W, 2.7 - 3.1 GHz, 50-Ohm Input/Output Matched, GaN HEMT for S-Band Radar Systems Rev 3.2 - April 2020 |
| CGHV35400F |
928Kb/11P |
400 W, 2.9 - 3.5 GHz, 50-Ohm Input/Output Matched, GaN HEMT for S-Band Radar Systems Rev 5.2 - February 2021 |
| CGH31240F |
2Mb/12P |
240 W, 2.7-3.1 GHz, 50-ohm Input/Output Matched, GaN HEMT for S-Band Radar Systems Rev. 2.2, 2022-11-11 |
| AMS4711 |
539Kb/8P |
Miniaturized pressure transmitter with 0 .. 5 V output March 2015 Rev. 4.0 |
| AMS3011 |
511Kb/8P |
Miniaturized pressure transmitter with 0 .. 5 V output April 2016 Rev. 1.0 |
| CMPA0527005F |
1Mb/12P |
5 W, 0.5 - 2.7 GHz, 50 V, GaN HEMT Rev. 2.0, 2022-8-26 |
| C4D05120A |
1Mb/9P |
4th Generation 1200 V, 5 A Silicon Carbide Schottky Diode Rev. 4, March 2023 |
| C6D05170H |
2Mb/8P |
6th Generation 1700 V, 5 A Silicon Carbide Schottky Diode Rev. 0, November 2022 |
| WSGPA01 |
712Kb/7P |
10 W, 5 GHz, GaN on SiC General Purpose Power Amplifier Rev. 02.1, 2021-07-13 |