| Produttore elettronici | Il numero della parte | Scheda tecnica | Spiegazioni elettronici |

Integrated Silicon Solu...
|
IS61DDP2B22M18A |
534Kb/31P |
2Mx18, 1Mx36 36Mb DDR-IIP (Burst 2) CIO SYNCHRONOUS SRAM |
| IS61DDPB21M18A |
527Kb/31P |
1Mx18, 512Kx36 18Mb DDR-IIP(Burst 2) CIO SYNCHRONOUS SRAM |
| IS61DDPB41M18A |
574Kb/32P |
1Mx18, 512Kx36 18Mb DDR-IIP(Burst 4) CIO SYNCHRONOUS SRAM |
| IS61DDPB42M18A |
573Kb/32P |
2Mx18, 1Mx36 36Mb DDR-IIP(Burst 4) CIO SYNCHRONOUS SRAM |
| IS61DDP2B42M18A |
578Kb/32P |
2Mx18, 1Mx36 36Mb DDR-IIP(Burst 4) CIO SYNCHRONOUS SRAM |
| IS61DDP2B44M18A |
549Kb/32P |
4Mx18, 2Mx36 72Mb DDR-IIP(Burst 4) CIO SYNCHRONOUS SRAM |
| IS61DDP2B21M18A |
534Kb/31P |
1Mx18, 512Kx36 18Mb DDR-IIP (Burst 2) CIO SYNCHRONOUS SRAM |
| IS61DDP2B41M18A |
578Kb/32P |
1Mx18, 512Kx36 18Mb DDR-IIP(Burst 4) CIO SYNCHRONOUS SRAM |
| IS61DDPB22M18A |
527Kb/31P |
2Mx18, 1Mx36 36Mb DDR-IIP(Burst 2) CIO SYNCHRONOUS SRAM |
| IS61DDPB24M18A |
527Kb/31P |
4Mx18, 2Mx36 72Mb DDR-IIP(Burst 2) CIO SYNCHRONOUS SRAM |
| IS61DDPB44M18A |
545Kb/32P |
4Mx18, 2Mx36 72Mb DDR-IIP(Burst 4) CIO SYNCHRONOUS SRAM |
| IS61DDPB22M36 |
636Kb/24P |
72 Mb (2M x 36 & 4M x 18) DDR-IIP (Burst of 2) CIO Synchronous SRAMs |

Molex Electronics Ltd.
|
48212-0100 |
111Kb/2P |
DDR / DDR 2 SODIMM Connectors |

ON Semiconductor
|
NCP51510MNTWG |
194Kb/7P |
3 Amp VTT Termination Source / Sink Regulator for DDR, DDR-2, DDR-3, DDR-4 July, 2013 ??Rev. 0 |

Qimonda AG
|
HYB25D512400C |
1Mb/37P |
DDR SDRAM |

Adam Technologies, Inc.
|
DDR-184-V-3 |
136Kb/1P |
DDR SOCKET |

Intersil Corporation
|
LP2998 |
338Kb/18P |
DDR-II and DDR-I Termination Regulator |

Adam Technologies, Inc.
|
DDR-240-V-5 |
124Kb/1P |
DDR SOCKET |
| DDR-240-V-4-SMT |
176Kb/1P |
DDR SOCKET |

Samsung semiconductor
|
K4H560438D-GC |
291Kb/26P |
DDR 256Mb |