| Produttore elettronici | Il numero della parte | Scheda tecnica | Spiegazioni elettronici |

Micron Technology
|
MT4LC8M8E1 |
382Kb/20P |
DRAM |
| MT4LC4M4B1 |
360Kb/20P |
DRAM |
| MT4LC8M8P4 |
397Kb/22P |
DRAM |

Renesas Technology Corp
|
RMHE41A184AGBG |
644Kb/52P |
1.1G-BIT Low Latency DRAM-III Common I/O Burst Length of 4 |

Micron Technology
|
MT4LC16M4A7 |
350Kb/20P |
DRAM |
| MT4LC4M16F5 |
339Kb/19P |
DRAM |
| MT4LC4M16R6-1 |
413Kb/24P |
DRAM |
| MT4LC4M16R6 |
474Kb/24P |
DRAM |
| MT4LC16M4G3 |
386Kb/22P |
DRAM |

Renesas Technology Corp
|
UPD48011318 |
1Mb/51P |
1.1G-BIT L ow Latency DRAM-III Common I/O Burst Length of 2 Feb 01, 2013 |
| UPD48011418 |
1Mb/51P |
1.1G-BIT Lo w Latency DRAM-III Common I/O Burst Length of 4 Feb 01, 2013 |

Micron Technology
|
MT12D436 |
310Kb/17P |
DRAM MODULE |
| MT48LC16M4A2 |
1Mb/55P |
SYNCHRONOUS DRAM |
| MT48LC1M16A1 |
1Mb/51P |
SYNCHRONOUS DRAM |

Samsung semiconductor
|
K4E661612D |
397Kb/36P |
CMOS DRAM |

Transcend Information. ...
|
DDR4 |
406Kb/8P |
DRAM Modules |

Eorex Corporation
|
EM482M3244VTB |
1Mb/17P |
Synchronous DRAM |
| EM48AM1684VBE |
1Mb/17P |
Synchronous DRAM |
| EM484M1644VTC |
199Kb/17P |
Synchronous DRAM |
| EM484M1644VTD |
1Mb/18P |
Synchronous DRAM |