H2PAK Datasheet(PDF) - STH260N4LF7-2

Produttore elettronici	Il numero della parte	Scheda tecnica	Spiegazioni elettronici
STMicroelectronics	STH260N4LF7-2	598Kb/17P	N-channel 40 V, 1.2 mΩ typ., 180 A, STripFET™ F7 Power MOSFETs in H2PAK-2 and H2PAK-6 packages November 2015
	STH310N10F7-2	1Mb/19P	N-channel 100 V, 1.9 m typ., 180 A STripFET VII DeepGATE Power MOSFET in H2PAK-2 and H2PAK-6 packages
	STH270N8F7-2	1Mb/21P	N-channel 80 V, 0.0017 typ., 180 A, STripFET VII DeepGATE Power MOSFETs in H2PAK-2, H2PAK-6 and TO-220
	STH270N4F3-6	1,023Kb/19P	N-channel 40 V, 1.4 m廓 typ., 180 A STripFET??III Power MOSFET in H2PAK-2 and H2PAK-6 packages March 2013 Rev 2
	STH180N10F3-2	957Kb/15P	N-channel 100 V, 3.9 milliohm, 180 A, H2PAK-2 STripFET III Power MOSFET
	STH200N55F3-2	483Kb/11P	N-channel 55 V, 1.8 mΩ, 160 A, H2PAK STripFET™ III Power MOSFET July 2009
	STH90N55F4-2	768Kb/16P	N-channel 55 V, 0.0064 Ω, 90 A, H2PAK STripFET™ DeepGATE™ Power MOSFET August 2011
	STP85N15F4	437Kb/12P	N-channel 150 V, 0.015 Ω, 85 A TO-220, H2PAK STripFET™ DeepGATE™ Power MOSFET July 2009
	STH150N10F7-2	958Kb/16P	N-channel 100 V, 0.0034 廓 typ., 110 A, STripFET??F7 Power MOSFET in a H2PAK-2 package September 2016 Rev 3
	SCTH35N65G2V-7	378Kb/15P	Silicon carbide Power MOSFET 650 V, 55 m廓 typ., 45 A in an H2PAK-7 package Rev 5 - December 2020
	STH140N8F7-2	772Kb/15P	N-channel 80 V, 3.3 m廓 typ., 90 A STripFET??F7 Power MOSFET in a H2PAK-2 package October 2014 Rev 2
	STH15810-2	969Kb/16P	N-channel 100 V, 0.0034 Ω typ., 110 A, STripFET™ F7 Power MOSFET in a H2PAK-2 package August 2014
	STH110N7F6-2	912Kb/17P	N-channel 68 V, 0.0053 Ω typ.,110 A, STripFET™ F6 Power MOSFET in a H2PAK-2 package March 2015
	STH2N120K5-2AG	440Kb/14P	Automotive-grade N-channel 1200 V, 7.25 typ., 1.5 A, MDmesh K5 Power MOSFET in an H2PAK-2 package June 2020 Rev 5
	SCTH35N65G2V-7AG	620Kb/15P	Automotive-grade silicon carbide Power MOSFET, 650 V, 45 A,55 mΩ (typ., TJ = 25 °C) in an H2PAK-7 package DS12029 - Rev 4 - January 2020
	SCTH40N120G2V7AG	606Kb/14P	Automotive-grade silicon carbide Power MOSFET, 1200 V, 33 A,75 mΩ (typ., TJ = 25 °C) in an H2PAK-7 package DS12969 - Rev 1 - April 2019
	STH80N10LF7-2AG	626Kb/14P	Automotive-grade N-channel 100 V, 7 mΩ typ., 80 A, STripFET™ F7 Power MOSFET in an H2PAK-2 package DS11708 - Rev 2 - January 2019
	SCTH100N65G2-7AG	623Kb/15P	Automotive-grade silicon carbide Power MOSFET, 650 V, 95 A, 20 m廓 (typ., TJ = 25 째C) in an H2PAK-7 package Rev 1 - November 2018
	SCT040H65G3SAG	227Kb/12P	Automotive-grade silicon carbide Power MOSFET 650 V, 40 m typ., 30 A in an H2PAK-7 straight leads package February 2022 Rev1
	STGH30H65DFB-2AG	408Kb/17P	Automotive-grade trench gate field-stop, 650 V, 30 A, high-speed HB series IGBT in an H2PAK-2 package April 2022 Rev 2

H2PAK Scheda tecnica, PDF

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