| Produttore elettronici | Il numero della parte | Scheda tecnica | Spiegazioni elettronici |

Freescale Semiconductor...
|
MMH3111NT1 |
302Kb/16P |
Heterostructure Field Effect Transistor |

NXP Semiconductors
|
MMH3111NT1 |
468Kb/15P |
Heterostructure Field Effect Transistor (GaAs HFET) Rev. 4.1, 10/2014 |

Freescale Semiconductor...
|
MMH3111NT1 |
302Kb/16P |
Heterostructure Field Effect Transistor (GaAs HFET) |

Qorvo, Inc
|
SGA8343Z |
790Kb/12P |
Heterostructure Bipolar Transistor |

KEC(Korea Electronics)
|
2N7000A |
67Kb/4P |
FIELD EFFECT TRANSISTOR |
| 2N7002A |
57Kb/4P |
FIELD EFFECT TRANSISTOR |
| 2N7000 |
68Kb/4P |
FIELD EFFECT TRANSISTOR |

NEC
|
2SK193 |
39Kb/2P |
Field Effect Transistor |

Isahaya Electronics Cor...
|
2SK930 |
226Kb/4P |
FIELD-EFFECT TRANSISTOR |

New Jersey Semi-Conduct...
|
40822 |
108Kb/1P |
FIELD-EFFECT TRANSISTOR |

KEC(Korea Electronics)
|
2N7002 |
70Kb/4P |
FIELD EFFECT TRANSISTOR |

New Jersey Semi-Conduct...
|
40822 |
108Kb/1P |
FIELD-EFFECT TRANSISTOR |

Isahaya Electronics Cor...
|
2SJ498 |
110Kb/4P |
FIELD-EFFECT TRANSISTOR |
| 2SJ145 |
219Kb/4P |
FIELD-EFFECT TRANSISTOR |

Toshiba Semiconductor
|
2SK788 |
366Kb/5P |
FIELD EFFECT TRANSISTOR |

Isahaya Electronics Cor...
|
2SK2881 |
103Kb/4P |
FIELD-EFFECT TRANSISTOR |

NEC
|
2SK3113B |
202Kb/8P |
MOS FIELD EFFECT TRANSISTOR |
| NP36P04KDG |
189Kb/7P |
MOS FIELD EFFECT TRANSISTOR |
| NP83P06PDG |
190Kb/7P |
MOS FIELD EFFECT TRANSISTOR |
| NP100P04PDG |
190Kb/7P |
MOS FIELD EFFECT TRANSISTOR |