| Produttore elettronici | Il numero della parte | Scheda tecnica | Spiegazioni elettronici |

Taiyo Yuden (U.S.A.), I...
|
HKQ0603W2N6C-T |
272Kb/2P |
High-Q Multilayer Chip Inductors for High Frequency Applications (HK series Q type)[HKQ-W] |
| HKQ0603W2N8C-T |
272Kb/2P |
High-Q Multilayer Chip Inductors for High Frequency Applications (HK series Q type)[HKQ-W] |
| HKQ0603W2N4S-T |
272Kb/2P |
High-Q Multilayer Chip Inductors for High Frequency Applications (HK series Q type)[HKQ-W] |
| HKQ0603W3N3B-T |
272Kb/2P |
High-Q Multilayer Chip Inductors for High Frequency Applications (HK series Q type)[HKQ-W] |
| HKQ0603W3N5B-T |
272Kb/2P |
High-Q Multilayer Chip Inductors for High Frequency Applications (HK series Q type)[HKQ-W] |
| HKQ0603W3N6S-T |
272Kb/2P |
High-Q Multilayer Chip Inductors for High Frequency Applications (HK series Q type)[HKQ-W] |
| HKQ0603W3N7B-T |
272Kb/2P |
High-Q Multilayer Chip Inductors for High Frequency Applications (HK series Q type)[HKQ-W] |
| HKQ0603W3N8C-T |
272Kb/2P |
High-Q Multilayer Chip Inductors for High Frequency Applications (HK series Q type)[HKQ-W] |
| HKQ0603W3N8S-T |
272Kb/2P |
High-Q Multilayer Chip Inductors for High Frequency Applications (HK series Q type)[HKQ-W] |
| HKQ0603W4N3H-T |
272Kb/2P |
High-Q Multilayer Chip Inductors for High Frequency Applications (HK series Q type)[HKQ-W] |
| HKQ0603W4N7H-T |
272Kb/2P |
High-Q Multilayer Chip Inductors for High Frequency Applications (HK series Q type)[HKQ-W] |
| HKQ0603W5N1J-T |
272Kb/2P |
High-Q Multilayer Chip Inductors for High Frequency Applications (HK series Q type)[HKQ-W] |
| HKQ0603W5N6J-T |
272Kb/2P |
High-Q Multilayer Chip Inductors for High Frequency Applications (HK series Q type)[HKQ-W] |
| HKQ0603W6N8H-T |
272Kb/2P |
High-Q Multilayer Chip Inductors for High Frequency Applications (HK series Q type)[HKQ-W] |
| HKQ0603W33NJ-T |
266Kb/2P |
High-Q Multilayer Chip Inductors for High Frequency Applications (HK series Q type)[HKQ-W] |

Analog Devices
|
SSM2250 |
287Kb/10P |
Mono 1.5 W/Stereo 250 mW Power Amplifier REV. 0 |

NEC
|
NE651R479A |
69Kb/8P |
0.4 W L-BAND POWER GaAs HJ-FET |

Bourns Electronic Solut...
|
CHF190104CBF |
205Kb/1P |
800 W Power RF Flanged Chip Termination/Resistor |
| L11B |
125Kb/1P |
Line Feed Resistors w/Thermal Fuse & Overvoltage Protectors |

PEAK electronics GmbH
|
P7BU-XXXXE |
240Kb/2P |
1KV ISOLATED 1.25 W UNREGULATED SINGLE OUTPUT DIP8 |