Produttore elettronici | Il numero della parte | Scheda tecnica | Spiegazioni elettronici |

Zilog, Inc.
|
Z8036 |
3Mb/79P |
Z-CIO AND CIO COUNTER / TIMER AND PARALLRL I/O UNIT |

Micron Technology
|
MT49H8M36 |
1Mb/49P |
288Mb CIO Reduced Latency |

Samsung semiconductor
|
K7I163684B |
422Kb/18P |
512Kx36 & 1Mx18 DDRII CIO b4 SRAM |
K7I323684C |
419Kb/18P |
1Mx36 & 2Mx18 DDRII CIO b4 SRAM |
K7I323682M |
377Kb/17P |
1Mx36 & 2Mx18 DDRII CIO b2 SRAM |
K7I163682B |
416Kb/18P |
512Kx36 & 1Mx18 DDRII CIO b2 SRAM |

GSI Technology
|
GS4576C36GL-25I |
2Mb/63P |
576Mb CIO Low Latency DRAM (LLDRAM II) |

Samsung semiconductor
|
K7I643682M |
417Kb/18P |
2Mx36 & 4Mx18 DDRII CIO b2 SRAM |
K7K1636T2C |
407Kb/19P |
512Kx36 & 1Mx18 DDRII+ CIO b2 SRAM |
K7K1636U2C |
600Kb/19P |
512Kx36 & 1Mx18 DDRII+ CIO b2 SRAM |
K7K3236T2C |
406Kb/19P |
1Mx36 & 2Mx18 DDRII+ CIO b2 SRAM |
K7K3236U2C |
406Kb/19P |
1Mx36 & 2Mx18 DDRII+ CIO b2 SRAM |
K7I323682C |
418Kb/18P |
1Mx36 & 2Mx18 DDRII CIO b2 SRAM |

List of Unclassifed Man...
|
LXZ2-4070 |
2Mb/23P |
LUXEON Z LUXEON Z ES |

Samsung semiconductor
|
K7I163682B |
378Kb/17P |
512Kx36-bit, 1Mx18-bit DDRII CIO b2 SRAM |

Integrated Silicon Solu...
|
IS61DDPB21M18A |
527Kb/31P |
1Mx18, 512Kx36 18Mb DDR-IIP(Burst 2) CIO SYNCHRONOUS SRAM |

Vishay Siliconix
|
TLZ2V4 |
119Kb/9P |
Z-Diodes Rev. A4, 08-JAug-02 |

List of Unclassifed Man...
|
BZX46 |
1Mb/6P |
Z-DIODES |

Integrated Silicon Solu...
|
IS61DDB41M18A |
488Kb/30P |
1Mx18, 512Kx36 18Mb DDR-II (Burst 4) CIO SYNCHRONOUS SRAM |
IS61DDP2B42M18A |
578Kb/32P |
2Mx18, 1Mx36 36Mb DDR-IIP(Burst 4) CIO SYNCHRONOUS SRAM |