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SM72482MA-4/NOPB Scheda tecnica (PDF) - Texas Instruments

SM72482MA-4/NOPB Datasheet PDF - Texas Instruments
Il numero della parte SM72482MA-4/NOPB
Scarica  SM72482MA-4/NOPB Scarica
Grandezza file   462.39 Kbytes
Page   19 Pages
Produttore elettronici  TI2 [Texas Instruments]
Homepage  https://www.ti.com
Logo TI2 - Texas Instruments
Spiegazioni elettronici Dual 5A Compound Gate Driver

SM72482MA-4/NOPB Datasheet (PDF)

Go To PDF Page Scarica Scheda tecnica
SM72482MA-4/NOPB Datasheet PDF - Texas Instruments

Il numero della parte SM72482MA-4/NOPB
Scarica  SM72482MA-4/NOPB Click to download

Grandezza file   462.39 Kbytes
Page   19 Pages
Produttore elettronici  TI2 [Texas Instruments]
Homepage  https://www.ti.com
Logo TI2 - Texas Instruments
Spiegazioni elettronici Dual 5A Compound Gate Driver

SM72482MA-4/NOPB Scheda tecnica (HTML) - Texas Instruments


SM72482MA-4/NOPB Dettagli del prodotto

1FEATURES
2• Renewable Energy Grade
• Independently Drives Two N-Channel
MOSFETs
• Compound CMOS and Bipolar Outputs Reduce
Output Current Variation
• 5A Sink, 3A Source Current Capability
• Two Channels Can be Connected in Parallel to
Double the Drive Current
• Independent Inputs (TTL Compatible)
• Fast Propagation Times (25 ns Typical)
• Fast Rise and Fall Times (14 ns Rise, 12 ns
Fall With 2 nF Load)
• Available in Dual Noninverting, Dual Inverting,
and Combination Configurations
• Supply Rail Under-Voltage Lockout Protection
(UVLO)
• SM72482 UVLO Configured to Drive PFET
Through OUT_A and NFET Through OUT_B
• Pin Compatible With Industry Standard Gate
Drivers
• Packages
– SOIC
– Thermally Enhanced VSSOP

APPLICATIONS
• Synchronous Rectifier Gate Drivers
• Switch-mode Power Supply Gate Driver
• Solenoid and Motor Drivers

DESCRIPTION
The SM72482 Dual Gate Driver replaces industry
standard gate drivers with improved peak output
current and efficiency. Each “compound” output driver
stage includes MOS and bipolar transistors operating
in parallel that together sink more than 5A peak from
capacitive loads. Combining the unique
characteristics of MOS and bipolar devices reduces
drive current variation with voltage and temperature.
Under-voltage lockout protection is also provided.
The drivers can be operated in parallel with inputs
and outputs connected to double the drive current
capability. This device is available in the SOIC
package.




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