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ST7FDALIF2M6 Scheda tecnica(PDF) 111 Page - STMicroelectronics

Il numero della parte ST7FDALIF2M6
Spiegazioni elettronici  8-BIT MCU WITH SINGLE VOLTAGE FLASH MEMORY, DATA EEPROM, ADC, TIMERS, SPI, DALI
PDF  141 Pages
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Produttore elettronici  STMICROELECTRONICS [STMicroelectronics]
Homepage  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

ST7FDALIF2M6 Scheda tecnica(HTML) 111 Page - STMicroelectronics

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13.6 MEMORY CHARACTERISTICS
TA = -40°C to 85°C, unless otherwise specified
13.6.1 RAM and Hardware Registers
13.6.2 FLASH Program Memory
13.6.3 EEPROM Data Memory
Notes:
1. Minimum VDD supply voltage without losing data stored in RAM (in HALT mode or under RESET) or in hardware reg-
isters (only in HALT mode). Guaranteed by construction, not tested in production.
2. Up to 32 bytes can be programmed at a time.
3. The data retention time increases when the TA decreases.
4. Data based on reliability test results and monitored in production.
5. Data based on characterization results, not tested in production.
6. Guaranteed by Design. Not tested in production.
7. Design target value pending full product characterization.
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
VRM
Data retention mode 1)
HALT mode (or RESET)
1.6
V
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
VDD
Operating voltage for Flash write/erase
2.4
5.5
V
tprog
Programming time for 1~32 bytes 2)
TA=−40 to +85°C
5
10
ms
Programming time for 1.5 kBytes
TA=+25°C
0.24
0.48
s
tRET
Data retention 4)
TA=+55°C
3)
20
years
NRW
Write erase cycles
TA=+25°C
10K7)
cycles
IDD
Supply current
Read / Write / Erase
modes
fCPU = 8MHz, VDD = 5.5V
2.66)
mA
No Read/No Write Mode
100
µA
Power down mode / HALT
0
0.1
µA
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
VDD
Operating voltage for EEPROM
write/erase
2.4
5.5
V
tprog
Programming time for 1~32 bytes
TA=−40 to +85°C
5
10
ms
tret
Data retention 4)
TA=+55°C
3)
20
years
NRW
Write erase cycles
TA=+25°C
300K7)
cycles



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