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STM32F722IC Scheda tecnica(PDF) 143 Page - STMicroelectronics

Il numero della parte STM32F722IC
Spiegazioni elettronici  Arm Cortex-M7 32b MCUFPU, 462DMIPS, up to 512KB Flash
PDF  229 Pages
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Produttore elettronici  STMICROELECTRONICS [STMicroelectronics]
Homepage  http://www.st.com
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STM32F722IC Scheda tecnica(HTML) 143 Page - STMicroelectronics

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DS11853 Rev 6
143/229
STM32F722xx STM32F723xx
Electrical characteristics
201
6.3.15
USB HS PHY external resistor characteristics
(on STM32F723xx devices)
6.3.16
Memory characteristics
Flash memory
The characteristics are given at TA = –40 to 105 °C unless otherwise specified.
The devices are shipped to customers with the Flash memory erased.
Table 51. USB HS PHY external resistor characteristics (on STM32F723xx devices)
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
REXT
External calibration resistor connected
(to GND) from OTG_HS_REXT
Required if using
USB HS PHY
2.97
3.00
3.03
k
Ω
Table 52. Flash memory characteristics
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
IDD
Supply current
Write / Erase 8-bit mode, VDD = 1.7 V
-
6.7
-
mA
Write / Erase 16-bit mode, VDD = 2.1 V
-
9.2
-
Write / Erase 32-bit mode, VDD = 3.3 V
-
12.6
-
Table 53. Flash memory programming
Symbol
Parameter
Conditions
Min(1)
Typ
Max(1) Unit
tprog
Word programming time
Program/erase parallelism
(PSIZE) = x 8/16/32
-16
100(2)
µs
tERASE16KB Sector (16 KB) erase time
Program/erase parallelism
(PSIZE) = x 8
-
346
418
ms
Program/erase parallelism
(PSIZE) = x 16
-
252
312
Program/erase parallelism
(PSIZE) = x 32
-
208
265
tERASE128KB Sector (128 KB) erase time
Program/erase parallelism
(PSIZE) = x 8
-
1953
2500
ms
Program/erase parallelism
(PSIZE) = x 16
-
1252
1639
Program/erase parallelism
(PSIZE) = x 32
-
927
1322
tERASE64KB Sector (64 KB) erase time
Program/erase parallelism
(PSIZE) = x 8
-
1027
1298
ms
Program/erase parallelism
(PSIZE) = x 16
-
675
840
Program/erase parallelism
(PSIZE) = x 32
-
505
682



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