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STM32G47PBY6XXX Scheda tecnica(PDF) 162 Page - STMicroelectronics |
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STM32G47PBY6XXX Scheda tecnica(HTML) 162 Page - STMicroelectronics |
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162 / 229 page  Electrical characteristics STM32G473xB STM32G473xC STM32G473xE 162/229 DS12712 Rev 3 Figure 34. OPAMP noise density @ 25°C 1. Guaranteed by design, unless otherwise specified. 2. Data guaranteed on normal and high speed mode unless otherwise specified. 3. Guaranteed by characterization results. 4. Valid also for inverting gain configuration with external bias. 5. R2 is the internal resistance between OPAMP output and OPAMP inverting input. R1 is the internal resistance between OPAMP inverting input and ground. The PGA gain =1+R2/R1 MSv62525V1 |
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