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HCS08 Scheda tecnica(PDF) 312 Page - NXP Semiconductors |
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HCS08 Scheda tecnica(HTML) 312 Page - NXP Semiconductors |
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312 / 316 page ![]() Appendix A Electrical Characteristics MC9S08SG8 MCU Series Data Sheet, Rev. 8 312 Freescale Semiconductor A.14 EMC Performance Electromagnetic compatibility (EMC) performance is highly dependant on the environment in which the MCU resides. Board design and layout, circuit topology choices, location and characteristics of external components as well as MCU software operation all play a significant role in EMC performance. The system designer should consult Freescale applications notes such as AN2321, AN1050, AN1263, AN2764, and AN1259 for advice and guidance specifically targeted at optimizing EMC performance. A.14.1 Radiated Emissions Microcontroller radiated RF emissions are measured from 150 kHz to 1 GHz using the TEM/GTEM Cell method in accordance with the IEC 61967-2 and SAE J1752/3 standards. The measurement is performed with the microcontroller installed on a custom EMC evaluation board while running specialized EMC test software. The radiated emissions from the microcontroller are measured in a TEM cell in two package orientations (North and East). The maximum radiated RF emissions of the tested configuration in all orientations are less than or equal to the reported emissions levels. Table A-17. Radiated Emissions, Electric Field Parameter Symbol Conditions Frequency fOSC/fBUS Level (Max) Unit Temp Rated1 1 Electrical characteristics only apply to the temperature rated devices marked with x. Standa rd AEC Grade 0 Radiated emissions, electric field VRE_TEM VDD = 5 V TA = +25 oC package type 16-TSSOP 0.15 – 50 MHz 4 MHz crystal 16 MHzbus 0 dB V xx 50 – 150 MHz 0 x x 150 – 500 MHz –6 x x 500 – 1000 MHz –9 x x IEC Level N — x x SAE Level 1 — x x |
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