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AP2305GN Scheda tecnica(PDF) 4 Page - Advanced Power Electronics Corp. |
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AP2305GN Scheda tecnica(HTML) 4 Page - Advanced Power Electronics Corp. |
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4 / 4 page  AP2305GN 65mΩ Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance Fig 11. Switching Time Circuit Fig 12. Gate Charge Circuit 0 2 4 6 8 10 12 0 5 10 15 20 25 Q G , Total Gate Charge (nC) I D = -4.2A V DS = -16V 0.01 0.1 1 10 100 0.1 1 10 100 -V DS , Drain-to-Source Voltage (V) T A =25 o C Single Pulse 1s 1ms 10ms 100ms DC 0.001 0.01 0.1 1 0.0001 0.001 0.01 0.1 1 10 100 1000 t , Pulse Width (s) 0.01 0.05 0.1 0.2 DUTY=0.5 Single Pulse PDM Duty factor = t/T Peak Tj = PDM x Rthja + Ta t T Rthja = 270℃ ℃ ℃ ℃/W 0.75 x RATED VDS TO THE OSCILLOSCOPE -10 V D G S VDS VGS RG RD 0.8 x RATED VDS TO THE OSCILLOSCOPE D G S VDS VGS ID IG -1~-3mA 10 100 1000 10000 1 5 9 131721 2529 -V DS , Drain-to-Source Voltage (V) f=1.0MHz Ciss Coss Crss |
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