AP2305GN datasheet(2/4 Pages) A-POWER

Il numero della parte	AP2305GN

Spiegazioni elettronici	P-CHANNEL ENHANCEMENT MODE POWER MOSFET

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Produttore elettronici	A-POWER [Advanced Power Electronics Corp.]

Homepage	http://www.a-power.com.tw

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AP2305GN

Electrical Characteristics@Tj=25

oC(unless otherwise specified)

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Units

BVDSS

Drain-Source Breakdown Voltage

VGS=0V, ID=-250uA

-20

-

V

ΔBV

DSS/ΔTj

Breakdown Voltage Temperature Coefficient

Reference to 25℃, ID=-1mA

-

-0.1

-V/℃

RDS(ON)

Static Drain-Source On-Resistance

VGS=-10V, ID=-4.5A

-

53

mΩ

VGS=-4.5V, ID=-4.2A

-

65

mΩ

VGS=-2.5V, ID=-2.0A

-

100

mΩ

VGS=-1.8V, ID=-1.0A

-

250

mΩ

VGS(th)

Gate Threshold Voltage

VDS=VGS, ID=-250uA

-0.5

-

V

gfs

Forward Transconductance

VDS=-5V, ID=-2.8A

-

9

-

S

IDSS

Drain-Source Leakage Current (Tj=25

oC)

VDS=-20V, VGS=0V

-

-1

uA

Drain-Source Leakage Current (Tj=55

oC)

VDS=-16V, VGS=0V

-

-10

uA

IGSS

Gate-Source Leakage

VGS=-

-

nA

Qg

Total Gate Charge

2

ID=-4.2A

-

10.6

-

nC

Qgs

Gate-Source Charge

VDS=-16V

-

2.32

-

nC

Qgd

Gate-Drain ("Miller") Charge

VGS=-4.5V

-

3.68

-

nC

td(on)

Turn-on Delay Time

2

VDS=-15V

-

5.9

-

ns

tr

Rise Time

ID=-4.2A

-

3.6

-

ns

td(off)

Turn-off Delay Time

RG=6Ω,VGS=-10V

-

32.4

-

ns

tf

Fall Time

RD=3.6Ω

-

2.6

-

ns

Ciss

Input Capacitance

VGS=0V

-

740

-

pF

Coss

Output Capacitance

VDS=-15V

-

167

-

pF

Crss

Reverse Transfer Capacitance

f=1.0MHz

-

126

-

pF

Source-Drain Diode

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Units

VSD

Forward On Voltage

2

IS=-1.2A, VGS=0V

-

-1.2

V

trr

Reverse Recovery Time

IS=-4.2A, VGS=0V,

-

27.7

-

ns

Qrr

Reverse Recovery Charge

dI/dt=100A/µs

-

22

-

nC

Notes:

1.Pulse width limited by Max. junction temperature.

2.Pulse width <300us , duty cycle <2%.

3.Surface mounted on 1 in

2 copper pad of FR4 board ; 270℃/W when mounted on min. copper pad.

± 12V

±100

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