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AP2305GN Scheda tecnica(PDF) 3 Page - Advanced Power Electronics Corp.

Il numero della parte AP2305GN
Spiegazioni elettronici  P-CHANNEL ENHANCEMENT MODE POWER MOSFET
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Produttore elettronici  A-POWER [Advanced Power Electronics Corp.]
Homepage  http://www.a-power.com.tw
Logo A-POWER - Advanced Power Electronics Corp.

AP2305GN Scheda tecnica(HTML) 3 Page - Advanced Power Electronics Corp.

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AP2305GN
65mΩ
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
2.01E+08
Fig 5. Forward Characteristic of
Fig 6. Gate Threshold Voltage v.s.
Reverse Diode
Junction Temperature
0.6
0.8
1
1.2
1.4
1.6
1.8
-50
0
50
100
150
T j , Junction Temperature (
o C)
I D = -4.2A
V GS = -4.5V
0
10
20
30
40
02
46
8
10
-V DS , Drain-to-Source Voltage (V)
-4.0V
T A =25
o C
-5.0V
-3.0V
V G = -2.0V
0
4
8
12
16
20
24
28
32
36
02468
-V DS , Drain-to-Source Voltage (V)
V G = -2.0V
-4.0V
-5.0V
-3.0V
T A = 150
o C
0.01
0.1
1
10
100
0
0.4
0.8
1.2
1.6
-V SD , Source-to-Drain Voltage (V)
T j =25
o C
T j =150
o C
0
0.5
1
1.5
-50
0
50
100
150
T j , Junction Temperature (
o C)
40
80
120
160
01
234
5
6
-V GS , Gate-to-Source Voltage (V)
I D =-4.2A
T A =25
o C


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