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STM32H7B0IB Scheda tecnica(PDF) 133 Page - STMicroelectronics |
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STM32H7B0IB Scheda tecnica(HTML) 133 Page - STMicroelectronics |
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133 / 205 page ![]() 2. Ideal transfer curve. 3. End point correlation line. 4. ET = Total Unadjusted Error: maximum deviation between the actual and the ideal transfer curves. 5. EO = Offset Error: deviation between the first actual transition and the first ideal one. 6. EG = Gain Error: deviation between the last ideal transition and the last actual one. 7. ED = Differential Linearity Error: maximum deviation between actual steps and the ideal one. 8. EL = Integral Linearity Error: maximum deviation between any actual transition and the end point correlation line. Figure 47. Typical connection diagram using the ADC with FT/TT pins featuring analog switch function MSv67871V3 Sample-and-hold ADC converter Converter Cparasitic(2) Ilkg(3) CADC VDDA(4) RAIN(1) VAIN RADC VREF+(4) VSSA I/O analog switch Sampling switch with multiplexing VSS VSS 1. Refer to Table 91. ADC characteristics for the values of RAIN and CADC. 2. Cparasitic represents the capacitance of the PCB (dependent on soldering and PCB layout quality) plus the pad capacitance (refer to Table 63. I/O static characteristics). A high Cparasitic value downgrades conversion accuracy. To remedy this, fADC should be reduced. 3. Refer to Table 63. I/O static characteristics for the value of Ilkg. 4. Refer to .Figure 12. Power supply scheme. General PCB design guidelines Power supply decoupling should be performed as shown in Figure 48. Power supply and reference decoupling (VREF+ not connected to VDDA) or Figure 49. Power supply and reference decoupling (VREF+ connected to VDDA), depending on whether VREF+ is connected to VDDA or not. The 100 nF capacitors should be ceramic (good quality). They should be placed them as close as possible to the chip. STM32H7B0xB Operating conditions DS13196 - Rev 7 page 133/205 |
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