© Semiconductor Components Industries, LLC, 2005

December, 2005 − Rev. 2

1

Publication Order Number:

MBT6429DW1T1/D

MBT6429DW1T1

Amplifier Transistors

NPN Silicon

Features

MAXIMUM RATINGS

Rating

Symbol

Value

Unit

Collector −Emitter Voltage

45

Vdc

Collector −Base Voltage

55

Vdc

Emitter −Base Voltage

6.0

Vdc

Collector Current − Continuous

200

mAdc

THERMAL CHARACTERISTICS

Characteristic

Symbol

Max

Unit

Total Device Dissipation (Note 1)

150

mW

Thermal Resistance,

Junction−to−Ambient

833

°C/W

Junction and Storage Temperature

−55 to +150

°C

Maximum ratings are those values beyond which device damage can occur.

Maximum ratings applied to the device are individual stress limit values (not

normal operating conditions) and are not valid simultaneously. If these limits are

exceeded, device functional operation is not implied, damage may occur and

reliability may be affected.

1. Device mounted on FR4 glass epoxy printed circuit board using the minimum

recommended foot print.

http://onsemi.com

Device

Package

ORDERING INFORMATION

MBT6429DW1T1

SC−88

SC−88

(SOT−363)

419B

MARKING DIAGRAM

1T

= Specific Device Code

M

= Date Code

G

= Pb−Free Package

(1)

(2)

(3)

(4)

(5)

(6)

1

MBT6429DW1T1G

SC−88

(Pb−Free)

†For information on tape and reel specifications,

including part orientation and tape sizes, please

refer to our Tape and Reel Packaging Specifications

Brochure, BRD8011/D.

3000/Tape & Reel

1T M

G

G

1

3000/Tape & Reel

(Note: Microdot may be in either location)