MBT6429DW1T1_05 datasheet(2/5 Pages) ONSEMI

Il numero della parte	MBT6429DW1T1

Spiegazioni elettronici	Amplifier Transistors NPN Silicon

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MBT6429DW1T1

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ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)

Characteristic

Symbol

Min

Max

Unit

OFF CHARACTERISTICS

Collector −Emitter Breakdown Voltage

(IC = 1.0 mAdc, IB = 0)

V(BR)CEO

45

−

Vdc

Collector −Base Breakdown Voltage

(IC = 0.1 mAdc, IE = 0)

V(BR)CBO

55

−

Vdc

Collector Cutoff Current

(VCE = 30 Vdc)

ICES

−

0.1

mAdc

Collector Cutoff Current

(VCB = 30 Vdc, IE = 0)

ICBO

−

0.01

mAdc

Emitter Cutoff Current

(VEB = 5.0 Vdc, IC = 0)

IEBO

−

0.01

mAdc

ON CHARACTERISTICS

DC Current Gain

(IC = 0.01 mAdc, VCE = 5.0 Vdc)

(IC = 0.1 mAdc, VCE = 5.0 Vdc)

(IC = 1.0 mAdc, VCE = 5.0 Vdc)

(IC = 10 mAdc, VCE = 5.0 Vdc)

hFE

500

−

1250

−

Collector −Emitter Saturation Voltage

(IC = 10 mAdc, IB = 0.5 mAdc)

(IC = 100 mAdc, IB = 5.0 mAdc)

VCE(sat)

−

0.2

0.6

Vdc

Base −Emitter On Voltage

(IC = 1.0 mAdc, VCE = 5.0 Vdc)

VBE(on)

0.56

0.66

Vdc

SMALL− SIGNAL CHARACTERISTICS

Current −Gain − Bandwidth Product

(IC = 1.0 mAdc, VCE = 5.0 Vdc, f = 100 MHz)

fT

100

700

MHz

Output Capacitance

(VCB = 10 Vdc, IE = 0, f = 1.0 MHz)

Cobo

−

3.0

pF

Input Capacitance

(VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz)

Cibo

−

8.0

pF

RS

in

en

IDEAL

TRANSISTOR

Figure 1. Transistor Noise Model

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