MBT6429DW1T1_05 datasheet(3/5 Pages) ONSEMI

Il numero della parte	MBT6429DW1T1

Spiegazioni elettronici	Amplifier Transistors NPN Silicon

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Produttore elettronici	ONSEMI [ON Semiconductor]

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MBT6429DW1T1

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3

Figure 2. Effects of Frequency

f, FREQUENCY (Hz)

7.0

10

20

30

5.0

Figure 3. Effects of Collector Current

IC, COLLECTOR CURRENT (mA)

Figure 4. Noise Current

f, FREQUENCY (Hz)

Figure 5. Wideband Noise Figure

RS, SOURCE RESISTANCE (OHMS)

3.0

10

NOISE CHARACTERISTICS

(VCE = 5.0 Vdc, TA = 25°C)

NOISE VOLTAGE

20

50 100 200

500 1k 2k

5k 10k 20k 50k 100k

BANDWIDTH = 1.0 Hz

IC = 10 mA

300 mA

30 mA

RS ≈ 0

3.0 mA

1.0 mA

7.0

10

20

30

5.0

3.0

0.01 0.02

0.05 0.1

0.2

0.5

1.0

2.0

5.0

10

RS ≈ 0

f = 10 Hz

100 Hz

1.0 kHz

10 kHz

100 kHz

IC = 10 mA

3.0 mA

1.0 mA

300 mA

100 mA

10 mA

RS ≈ 0

10

10 20

50 100 200

500 1k 2k

5k 10k 20k 50k 100k

0.1

0.2

0.3

1.0

0.7

2.0

3.0

5.0

7.0

10

20

50 100 200 500 1k 2k

5k 10k 20k 50k 100k

0

4.0

8.0

12

16

20

BANDWIDTH = 10 Hz to 15.7 kHz

IC = 1.0 mA

500 mA

100 mA

10 mA

100 Hz NOISE DATA

300

200

100

3.0

5.0

7.0

10

20

30

50

70

RS, SOURCE RESISTANCE (OHMS)

10 20

50 100 200

500 1k 2k

5k 10k 20k 50k 100k

0

4.0

8.0

12

16

20

Figure 6. Total Noise Voltage

BANDWIDTH = 1.0 Hz

IC = 10 mA

3.0 mA

1.0 mA

300 mA

100 mA

30 mA

10 mA

10 20

50 100 200

500 1k 2k

5k 10k 20k 50k 100k

IC = 10 mA

300 mA

100 mA

30 mA

3.0 mA

1.0 mA

10 mA

BANDWIDTH = 1.0 Hz

RS, SOURCE RESISTANCE (OHMS)

Figure 7. Noise Figure

0.5

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