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ST7LITE49M Scheda tecnica(PDF) 156 Page - STMicroelectronics

Il numero della parte ST7LITE49M
Spiegazioni elettronici  8-bit MCU with single voltage Flash memory data EEPROM, ADC, 8/12-bit timers, and I²C interface
PDF  188 Pages
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Produttore elettronici  STMICROELECTRONICS [STMicroelectronics]
Homepage  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

ST7LITE49M Scheda tecnica(HTML) 156 Page - STMicroelectronics

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Electrical characteristics
ST7LITE49M
156/188
13.7
Memory characteristics
TA = -40°C to 125 °C, unless otherwise specified.
Table 82.
RAM and hardware registers characteristics
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
VRM
Data retention mode(1)
1.
Minimum VDD supply voltage without losing data stored in RAM (in Halt mode or under Reset) or in
hardware registers (only in Halt mode). Guaranteed by construction, not tested in production.
Halt mode (or Reset)
1.6
V
Table 83.
Flash program memory characteristics
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
VDD
Operating voltage for Flash
Write/Erase
Refer to operating
range of VDD with TA,
Section 13.3.1 on
page 145
2.4
5.5
V
tprog
Programming time for 1~32
bytes(1)
1.
Up to 32 bytes can be programmed at a time.
TA=−40 to +125 °C
5
10
ms
Programming time for 4 kbytes
TA=+25 °C
0.64
1.28
s
tRET
Data retention(2)
2.
Data based on reliability test results and monitored in production.
TA=+55 °C
(3)
3.
The data retention time increases when the TA decreases.
20
years
NRW
Write erase cycles
TA=+25 °C
10K
cycles
IDD
Supply current(4)
4.
Guaranteed by Design. Not tested in production.
Read / Write / Erase
modes
fCPU = 8 MHz,
VDD = 5.5 V
2.6
mA
No Read/No Write
mode
100
µA
Power down mode /
Halt
00.1
µA
Table 84.
Data EEPROM memory characteristics
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
VDD
Operating voltage for
EEPROM Write/Erase
Refer to operating range of
VDD with TA, Section 13.3.1 on
page 145
2.4
5.5
V
tprog
Programming time for
1~32 bytes
TA=−40 to +125°C
5
10
ms
tret
Data retention(1)
1.
Data based on reliability test results and monitored in production.
TA=+55°C
(2)
2.
The data retention time increases when the TA decreases.
20
years
NRW
Write erase cycles
TA=+25°C
300K cycles



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