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G2U4407 Scheda tecnica(PDF) 2 Page - GTM CORPORATION

Il numero della parte G2U4407
Spiegazioni elettronici  P-CHANNEL ENHANCEMENT MODE POWER MOSFET
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Produttore elettronici  GTM [GTM CORPORATION]
Homepage  http://www.gtm.com.tw
Logo GTM - GTM CORPORATION

G2U4407 Scheda tecnica(HTML) 2 Page - GTM CORPORATION

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G2U4407
Page: 2/4
ISSUED DATE :2005/07/05
REVISED DATE :
Electrical Characteristics(Tj = 25
Unless otherwise specified)
Parameter
Symbol
Min.
Typ.
Max.
Unit
Test Conditions
Drain-Source Breakdown Voltage
BVDSS
-30
-
-
V
VGS=0, ID=-250uA
Breakdown Voltage Temperature Coefficient
BVDSS /
Tj
-
-0.01
-
V/ :
Reference to 25 : , ID=-1mA
Gate Threshold Voltage
VGS(th)
-1.0
-
-3.0
V
VDS=VGS, ID=-250uA
Forward Transconductance
gfs
-
36
-
S
VDS=-10V, ID=-24A
Gate-Source Leakage Current
IGSS
-
-
D100
nA
VGS= D25V
Drain-Source Leakage Current(Tj=25 : )
-
-
-1
uA
VDS=-30V, VGS=0
Drain-Source Leakage Current(Tj=150 : )
IDSS
-
-
-25
uA
VDS=-24V, VGS=0
-
-
14
VGS=-10V, ID=-24A
Static Drain-Source On-Resistance2
RDS(ON)
-
-
23
m Ł
VGS=-4.5V, ID=-16A
Total Gate Charge2
Qg
-
35
60
Gate-Source Charge
Qgs
-
5
-
Gate-Drain (“Miller”) Change
Qgd
-
26
-
nC
ID=-24A
VDS=-24V
VGS=-4.5V
Turn-on Delay Time2
Td(on)
-
11
-
Rise Time
Tr
-
64
-
Turn-off Delay Time
Td(off)
-
63
-
Fall Time
Tf
-
100
-
ns
VDS=-15V
ID=-24A
VGS=-10V
RG=3.3 Ł
RD=0.63 Ł
Input Capacitance
Ciss
-
2120
3390
Output Capacitance
Coss
-
630
-
Reverse Transfer Capacitance
Crss
-
550
-
pF
VGS=0V
VDS=-25V
f=1.0MHz
Source-Drain Diode
Parameter
Symbol
Min.
Typ.
Max.
Unit
Test Conditions
Forward On Voltage2
VSD
-
-
-1.2
V
IS=-24A, VGS=0V
Reverse Recovery Time2
Trr
-
39
-
ns
Reverse Recovery Charge
Qrr
-
38
-
nC
IS=-24A, VGS=0V
dI/dt=100A/ s
Notes: 1. Pulse width limited by safe operating area.
2. Pulse width 300us, duty cycle 2%.


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