G2U4407

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ISSUED DATE :2005/07/05

REVISED DATE :

G

P-CHANNEL ENHANCEMENT MODE POWER MOSFET

Description

The G2U4407 provide the designer with the best combination of fast switching, ruggedized device design, low

on-resistance and cost-effectiveness.

The TO-262 package is universally preferred for all commercial-industrial applications and suited for low

voltage applications such as DC/DC converters.

Features

*Simple Drive Requirement

*Lower On-resistance

*Fast Switching Characteristic

Package Dimensions

Millimeter

Millimeter

REF.

Min.

Max.

REF.

Min.

Max.

A

4.40

4.80

c2

1.25

1.45

b

0.76

1.00

b2

1.17

1.47

c

0.36

0.50

L

13.25

14.25

D

8.60

9.00

e

2.54 REF.

E

9.80

10.4

L2

1.27 REF.

Absolute Maximum Ratings

Parameter

Symbol

Ratings

Unit

Drain-Source Voltage

-30

V

Gate-Source Voltage

f 25

V

-50

A

-32

A

-180

A

Total Power Dissipation

54

W

Linear Derating Factor

0.4

W/

Operating Junction and Storage Temperature Range

Tj, Tstg

-55 ~ +150

Thermal Data

Parameter

Symbol

Value

Unit

Thermal Resistance Junction-case

Max.

Rthj-case

2.3

/W

Thermal Resistance Junction-ambient

Max.

Rthj-amb

62

/W

-30V

14m

-50A

Pb Free Plating Product