G

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ISSUED DATE :2005/12/05

REVISED DATE :

G

G

P-CHANNEL ENHANCEMENT MODE POWER MOSFET

Description

The G

on-resistance and cost-effectiveness.

The through-hole version (TO-251) is available for low-profile applications and suited for low voltage

applications such as DC/DC converters.

Features

*Simple Drive Requirement

*2.5V Gate Drive Capability

*Fast Switching Characteristic

Package Dimensions

Millimeter

Millimeter

REF.

Min.

Max.

REF.

Min.

Max.

A

6.40

6.80

G

0.50

0.70

B

5.20

5.50

H

2.20

2.40

C

6.80

7.20

J

0.45

0.55

D

7.20

7.80

K

0.45

0.60

E

2.30 REF.

L

0.90

1.50

F

0.60

0.90

M

5.40

5.80

Absolute Maximum Ratings

Parameter

Symbol

Ratings

Unit

Drain-Source Voltage

-20

V

Gate-Source Voltage

±12

V

-18

A

-14

A

-50

A

Total Power Dissipation

31.25

W

Linear Derating Factor

0.25

W/ :

Operating Junction and Storage Temperature Range

Tj, Tstg

-55 ~ +150

:

Thermal Data

Parameter

Symbol

Value

Unit

Thermal Resistance Junction-case

Max.

Rthj-c

4.0

: /W

Thermal Resistance Junction-ambient

Max.

Rthj-a

110

: /W

-20V

52m

-18A

Pb Free Plating Product

TO-251