GM162 datasheet(2/4 Pages) GTM

Il numero della parte	GM162

Spiegazioni elettronici	P-CHANNEL ENHANCEMENT MODE POWER MOSFET

PDF	4 Pages

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Produttore elettronici	GTM [GTM CORPORATION]

Homepage	http://www.gtm.com.tw

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2 / 4 page

CORPORATION

2/4

ISSUED DATE :2004/11/01

REVISED DATE :

Electrical Characteristics(Tj = 25

Unless otherwise specified)

Parameter

Symbol

Min.

Typ.

Max.

Unit

Test Conditions

Drain-Source Breakdown Voltage

BVDSS

-30

-

V

VGS=0, ID=-250uA

Breakdown Voltage Temperature Coefficient

BVDSS/ Tj

-

-0.1

-

V/ :

Reference to 25 : , ID=-1mA

Gate Threshold Voltage

VGS(th)

-0.5

-

-1.2

V

VDS= VGS, ID=-250uA

Forward Transconductance

gfs

-

9

-

S

VDS=-5.0V ,ID=-3.0A

Gate-Source Leakage Current

IGSS

-

D100

nA

VGS= D12V

Drain-Source Leakage Current(Tj=25 : )

-

-1

uA

VDS=-30V, VGS=0

Drain-Source Leakage Current(Tj=70 : )

IDSS

-

-25

uA

VDS=-24V, VGS=0

-

60

ID=-3.2A, VGS=-10V

-

80

ID=-3.0A, VGS=-4.5V

Static Drain-Source On-Resistance2

RDS(ON)

-

150

m Ł

ID=-2.0A, VGS=-2.5V

Total Gate Charge2

Qg

-

10

18

ID=-3.2A

Gate-Source Charge

Qgs

-

1.8

-

nC

VDS=-24V

Gate-Drain (“Miller”) Change

Qgd

-

3.6

-

VGS=-4.5V

Turn-on Delay Time2

Td(on)

-

7

-

Rise Time

Tr

-

15

-

Turn-off Delay Time

Td(off)

-

21

-

Fall Time

Tf

-

15

-

ns

VDS=-15V

ID=-3.2A

VGS=-10V

RG=3.3 Ł

RD=4.6 Ł

Input Capacitance

Ciss

-

735

1325

Output Capacitance

Coss

-

100

-

Reverse Transfer Capacitance

Crss

-

80

-

pF

VGS=0V

VDS=-25V

f=1.0MHz

Source-Drain Diode

Forward On Voltage2

VSD

-

-1.2

V

IS=-1.2A, VGS=0

Reverse Recovery Time

Trr

-

24

-

ns

Reverse Recovery Charge

Qrr

-

19

-

nC

IS=-3.2A, VGS=0

dI/dt=100A/ s

Notes: 1. Pulse width limited by Max. junction temperature.

2. Pulse width 300us, duty cycle 2%.

3. Surface mounted on 1 in2 copper pad of FR4 board;270 : /w when mounted on min. copper pad.

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