M58PR256LE datasheet(105/119 Pages) STMICROELECTRONICS

105 / 119 page

M58PR256LE, M58PR512LE, M58PR001LE

Flowcharts and pseudocodes

105/119

Figure 23.

Block erase and EFA block erase flowchart and pseudocode

Any address within the bank can equally be used.

If an error is found, the Status Register must be cleared before further program/erase operations.

Write 20h (Main Array)

or 24h (EFA) (1)

AI12858

Start

Write Block

Address & D0h

Read Status

YES

SR7 = 1

YES

SR3 = 0

YES

SR4, SR5 = 1

VPP Invalid

Error (2)

Command

Sequence Error (2)

SR5 = 0

Erase Error (2)

End

YES

SR1 = 0

Erase to Protected

Block Error (2)

YES

erase_command ( blockToErase )

/* EFA_erase_command (blockToErase) { */

writeToFlash (blockToErase, 0x20) ;

/* writeToFlash (blockToErase, 0x24) */

/* 20h is the command for Block Erase while 24h is the

command for Erase EFA Block*/

/*see note (1) */

writeToFlash (blockToErase, 0xD0) ;

/* only A12-Amax are significannt */

/* Memory enters read status state after

the Erase Command */

} while (status_register.SR7== 0) ;

do {

status_register=readFlash (blockToErase) ;

/* see note (1) */

/* E or G must be toggled*/

if (status_register.SR3==1) /*VPP invalid error */

error_handler ( ) ;

if ( (status_register.SR4==1) && (status_register.SR5==1) )

/* command sequence error */

error_handler ( ) ;

if (status_register.SR1==1) /*program to protect block error */

error_handler ( ) ;

if ( (status_register.SR5==1) )

/* erase error */

error_handler ( ) ;

}

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