6N135,6N136

2007-10-01

2

Characteristic

Symbol

Rating

Unit

Forward current

(Note 1)

25

mA

Pulse forward current

(Note 2)

50

mA

Total pulse forward current

(Note 3)

1

A

Reverse voltage

5

V

Diode power dissipation

(Note 4)

45

mW

Output current

8

mA

Peak output current

16

mA

Emitter

−base reverse voltage (pin 5−7)

5

V

Supply voltage

−0.5~15

V

Output voltage

−0.5~15

V

Base current (pin 7)

5

mA

Output power dissipation

(Note 5)

100

mW

Operating temperature range

−55~100

°C

Storage temperature range

−55~125

°C

Lead solder temperature (10s)

(Note 6)

260

°C

Isolation voltage

(Note 7)

2500

Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the

significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even

if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum

ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test

report and estimated failure rate, etc).

(Note 1)

Derate 0.8mA above 70°C.

(Note 2)

50% duty cycle, 1ms pulse width.

Derate 1.6mA / °C above 70°C.

(Note 3)

Pulse width 1μs, 300pps.

(Note 4)

Derate 0.9mW / °C above 70°C.

(Note 5)

Derate 2mW / °C above 70°C.

(Note 6)

Soldering portion of lead: Up to 2mm from the body of the device.

(Note 7)

R.H. ≤ 60%, AC / 1min.