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STM32H523VCU6 Scheda tecnica(PDF) 128 Page - STMicroelectronics

Il numero della parte STM32H523VCU6
Spiegazioni elettronici  Arm Cortex -M33 32-bit MCUTrustZone FPU, 375 DMIPS Arm Cortex -M33 32-bit MCUTrustZone FPU, 375 DMIPS
PDF  228 Pages
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Produttore elettronici  STMICROELECTRONICS [STMicroelectronics]
Homepage  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STM32H523VCU6 Scheda tecnica(HTML) 128 Page - STMicroelectronics

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Electrical characteristics
STM32H523xx
128/228
DS14540 Rev 1
All I/Os are CMOS and TTL compliant (no software configuration required). Their
characteristics cover more than the strict CMOS technology or TTL parameters. The
coverage of these requirements for FT I/Os is shown in Figure 20.
VHYS(3)
TT_xx, FT_xxx and NRST
I/O input hysteresis
1.08 V < VDD < 3.6 V
-
250
-
mV
BOOT0 I/O input
hysteresis
1.71 V < VDD < 3.6 V
-
200
-
Ileak(4)
FT_xx Input leakage
current(3)
0 < VIN ≤
Max(VDDXXX)(7)
--
±200
nA
Max(VDDXXX) <
VIN ≤ Max(VDDXXX)+
1 V) (5)(7)
-
-
2500
Max(VDDXXX) < VIN ≤
5.5 V (5)(7)
--
750
TT_xx Input leakage
current
0< VIN ≤ Max(VDDXXX)
(7)
--
±200
BOOT0
0< VIN ≤ VDDOX
--
15
RPU
Weak pull-up
equivalent resistor(6)
VIN = VSS
30
40
50
kΩ
RPD
Weak pull-down
equivalent resistor(6)
VIN = VDD(7)
30
40
50
CIO
I/O pin capacitance
-
-
5
-
pF
1. VDDIOx represents VDD or VDDIO2.
2. Compliant with CMOS requirements.
3. Specified by design - Not tested in production.
4. This parameter represents the pad leakage of the I/O itself. The total product pad leakage is provided by the following
formula: ITotal_Ieak_max = 10 μA + [number of I/Os where VIN is applied on the pad] ₓ Ilkg(Max).
5. VIN must be lower than Max(VDDXXX) + 3.6 V.
6. The pull-up and pull-down resistors are designed with a true resistance in series with a switchable PMOS/NMOS. This
PMOS/NMOS contribution to the series resistance is minimal (~10%).
7. Max(VDDXXX) is the maximum value of all the I/O supplies.
Table 56. I/O static characteristics(1) (continued)
Symbol
Parameter
Condition
Min
Typ
Max
Unit



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