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DRA752ABC Scheda tecnica(PDF) 142 Page - Texas Instruments |
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DRA752ABC Scheda tecnica(HTML) 142 Page - Texas Instruments |
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142 / 443 page ![]() 142 DRA756, DRA755, DRA754, DRA752 DRA751, DRA750, DRA746, DRA745, DRA744 SPRS950F – DECEMBER 2015 – REVISED MAY 2019 www.ti.com Submit Documentation Feedback Product Folder Links: DRA756 DRA755 DRA754 DRA752 DRA751 DRA750 DRA746 DRA745 DRA744 Specifications Copyright © 2015–2019, Texas Instruments Incorporated (1) AEC Q100-002 indicates that HBM stressing shall be in accordance with the ANSI/ESDA/JEDEC JS-001 specification. 5.3 Power on Hour (POH) Limits The information in the section below is provided solely for your convenience and does not extend or modify the warranty provided under TI’s standard terms and conditions for TI semiconductor products. NOTE POH is a functional of voltage, temperature and time. Usage at higher voltages and temperatures will result in a reduction in POH to achieve the same reliability performance. For assessment of alternate use cases, contact your local TI representative. Table 5-3. Power on Hour (POH) Limits IP Duty Cycle Voltage Domain Voltage (V) (max) Frequency (MHz) (max) Tj(°C) POH Arm 70% vdd_mpu OPP_HIGH 1500 Automotive Profile(1) 20000 30% vdd_mpu Retention 0 40% vdd_mpu OPP_HIGH 1500 Automotive Profile(1) 20000 60% vdd_mpu OPP_HIGH 1000 55% vdd_mpu OPP_HIGH 1500 Automotive Profile(1) 20000 45% vdd_mpu OPP_NOM 1000 100% vdd_mpu OPP_HIGH 1176 Automotive Profile(1) 20000 100% vdd_mpu OPP_NOM 1000 Automotive Profile(1) 20000 Others(2) 100% All All Support OPPs Automotive Profile(1) 20000 (1) Automotive profile is defined as 20000 power on hours with junction temperature as follows: 5%@-40°C, 65%@70°C, 20%@110°C, 10%@125°C. (2) Others covers all other IP's voltage and temperature combinations that are not specified in the table, and are constrained by other sections of this data manual. |
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