4513 datasheet(170/210 Pages) RENESAS

170 / 210 page

4513/4514 Group User’s Manual

APPENDIX

3-3

3.1 Electrical characteristics

Symbol

VDD

VRAM

VSS

VIH

VIL

IOH(peak)

IOH(avg)

IOL(peak)

IOL(avg)

ΣIOH(avg)

ΣIOL(avg)

Parameter

Supply voltage

RAM back-up voltage

(at RAM back-up mode)

Supply voltage

“H” level input voltage

“L” level input voltage

“H” level peak output current

“H” level average output current

“L” level peak output current

“L” level average output current

“H” level total average current

“L” level total average current

Note: The average output current (IOH, IOL) is the average value during 100 ms.

Unit

Conditions

Mask ROM version

Middle-speed mode

Mask ROM version

High-speed mode

One Time PROM version

Middle-speed mode

One Time PROM version

High-speed mode

Mask ROM version

One Time PROM version

P0, P1, P2, P3, P4, P5, XIN, VDCE

D0–D7

RESET

CNTR0, CNTR1, SIN, SCK, INT0, INT1

P0, P1, P2, P3, P4, P5, D0–D7, XIN, VDCE

RESET

CNTR0, CNTR1, SIN, SCK, INT0, INT1

P5 (Note)

P3, RESET

D6, D7

D0–D5

P0, P1, P4, P5, SCK,

SOUT

P3, RESET (Note)

D6, D7 (Note)

D0–D5 (Note)

P0, P1, P4, P5, SCK,

SOUT (Note)

P5, D, RESET, SCK, SOUT

P0, P1, P3, P4

Max.

5.5

VDD

0.2VDD

0.3VDD

0.15VDD

Limits

Min.

2.5

2.0

4.0

2.5

2.0

2.5

4.0

2.5

1.8

2.0

0.8VDD

0.85VDD

–20

–10

–5

–30

Typ.

f(XIN)

≤ 4.2 MHz

f(XIN)

≤ 3.0 MHz

f(XIN)

≤ 4.2 MHz

f(XIN)

≤ 2.0 MHz

f(XIN)

≤ 1.5 MHz

f(XIN)

≤ 4.2 MHz

f(XIN)

≤ 4.2 MHz

f(XIN)

≤ 2.0 MHz

VDD = 5.0 V

VDD = 3.0 V

VDD = 5.0 V

VDD = 3.0 V

VDD = 5.0 V

VDD = 3.0 V

VDD = 5.0 V

VDD = 3.0 V

VDD = 5.0 V

VDD = 3.0 V

VDD = 5.0 V

VDD = 3.0 V

VDD = 5.0 V

VDD = 3.0 V

VDD = 5.0 V

VDD = 3.0 V

VDD = 5.0 V

VDD = 3.0 V

VDD = 5.0 V

VDD = 3.0 V

3.1.2 Recommended operating conditions

Table 3.1.2 Recommended operating conditions 1

(Mask ROM version:Ta = –20 °C to 85 °C, VDD = 2.0 V to 5.5 V, unless otherwise noted)

(One Time PROM version:Ta = –20 °C to 85 °C, VDD = 2.5 V to 5.5 V, unless otherwise noted)

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