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Motore di ricerca datesheet componenti elettronici |
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Motore di ricerca datesheet componenti elettronici |
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S12OSCV2D Scheda tecnica(PDF) 101 Page - Freescale Semiconductor, Inc |
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S12OSCV2D Scheda tecnica(HTML) 101 Page - Freescale Semiconductor, Inc |
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101 / 126 page  MC9S12DJ64 Device User Guide — V01.17 101 A.3.2 NVM Reliability The reliability of the NVM blocks is guaranteed by stress test during qualification, constant process monitors and burn-in to screen early life failures. The failure rates for data retention and program/erase cycling are specified at the operating conditions noted. The program/erase cycle count on the sector is incremented every time a sector or mass erase event is executed. Table A-12 NVM Reliability Characteristics Conditions are shown in Table A-4 unless otherwise noted Num C Rating Symbol Min Typ Max Unit 1C Data Retention at an average junction temperature of TJavg = 70°C tNVMRET 15 Years 2 C Flash number of Program/Erase cycles nFLPE 10,000 Cycles 3C EEPROM number of Program/Erase cycles (–40 °C ≤ T J ≤ 0°C) nEEPE 10,000 Cycles 4C EEPROM number of Program/Erase cycles (0 °C < T J ≤ 140°C) nEEPE 100,000 Cycles |
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