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M38B53M4-059FP Scheda tecnica(PDF) 349 Page - Mitsubishi Electric Semiconductor |
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M38B53M4-059FP Scheda tecnica(HTML) 349 Page - Mitsubishi Electric Semiconductor |
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349 / 355 page ![]() 38B5 Group User’s Manual 3-101 APPENDIX 3.12 M35501FP “H” output voltage “H” output voltage “L” output voltage Hysteresis “H” input current “H” input current “L” input current “L” input current Output load current Output leakage current Power source VOH VOH VOL VT+— VT– IIH IIH IIL IIL ILOAD ILEAK ICC IOH = –18 mA IOH = –10 mA IOL = 10 mA VCC = 5.0 V VI = VCC VI = VCC VCC = 5.0 V VI = VSS VI = VSS VCC = 5.0 V VEE = VCC –43 V VOL = VCC Output transistors are off. VEE = VCC –43 V VOL = VCC –43 V Output transistors are off. Table 3.12.5 Electrical characteristics (VCC = 4.0 to 5.5 V, Ta = –20 to 85 °C, unless otherwise noted) Test conditions Parameter Symbol DIG output DIG0–DIG15 OVFOUT OVFOUT CLK, OVFIN RESET OVFIN RESET CLK, SEL OVFIN CLK, SEL RESET DIG0 – DIG15 DIG0–DIG15 Limits Min. VCC –2.0 VCC –2.0 30 –60 500 Typ. 0.4 70 –130 650 50 Max. 2.0 5.0 140 –5.0 –185 800 –10 V V V V µA µA µA µA µA µA µA Unit VCC = 5.0 V, CLK = 100 kHz Output transistors are off. |
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