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Motore di ricerca datesheet componenti elettronici |
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Motore di ricerca datesheet componenti elettronici |
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STM32F479AI Scheda tecnica(PDF) 150 Page - STMicroelectronics |
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STM32F479AI Scheda tecnica(HTML) 150 Page - STMicroelectronics |
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150 / 217 page  Electrical characteristics STM32F479xx 150/217 DocID028010 Rev 3 Figure 49. USB OTG full speed timings: definition of data signal rise and fall time USB high speed (HS) characteristics Unless otherwise specified, the parameters given in Table 72 for ULPI are derived from tests performed under the ambient temperature, fHCLK frequency summarized in Table 71 and VDD supply voltage conditions summarized in Table 70, with the following configuration: • Output speed is set to OSPEEDRy[1:0] = 11, unless otherwise specified • Capacitive load C = 20 pF / 15 pF, unless otherwise specified • Measurement points are done at CMOS levels: 0.5 VDD. Refer to Section 5.3.20 for more details on the input/output characteristics. Table 69. USB OTG full speed electrical characteristics(1) 1. Guaranteed by design. Driver characteristics Symbol Parameter Conditions Min Max Unit tr Rise time(2) 2. Measured from 10% to 90% of the data signal. For more detailed informations, please refer to USB Specification - Chapter 7 (version 2.0). CL = 50 pF 420 ns tf Fall time(2) CL = 50 pF 4 20 trfm Rise/ fall time matching tr/tf 90 110 % VCRS Output signal crossover voltage - 1.3 2.0 V ZDRV Output driver impedance(3) 3. No external termination series resistors are required on DP (D+) and DM (D-) pins since the matching impedance is included in the embedded driver. Driving high or low 28 44 Ω Table 70. USB HS DC electrical characteristics Symbol Parameter Min.(1) 1. All the voltages are measured from the local ground potential. Max.(1) Unit Input level VDD USB OTG HS operating voltage 1.7 3.6 V ai14137 tf Differen tial Data L ines VSS VCRS tr Crossover points |
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