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Motore di ricerca datesheet componenti elettronici |
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STM32F479AI Scheda tecnica(PDF) 161 Page - STMicroelectronics |
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STM32F479AI Scheda tecnica(HTML) 161 Page - STMicroelectronics |
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161 / 217 page  DocID028010 Rev 3 161/217 STM32F479xx Electrical characteristics 190 5.3.25 Temperature sensor characteristics 5.3.26 VBAT monitoring characteristics 5.3.27 Reference voltage The parameters given in Table 85 are derived from tests performed under ambient temperature and VDD supply voltage conditions summarized in Table 17. Table 82. Temperature sensor characteristics Symbol Parameter Min Typ Max Unit TL(1) VSENSE linearity with temperature - ±1 ±2°C Avg_Slope(1) Average slope - 2.5 - mV/°C V25(1) Voltage at 25 °C - 0.76 - V tSTART(2) Startup time - 6 10 µs TS_temp(2) ADC sampling time when reading the temperature (1 °C accuracy) 10 - - 1. Based on test during characterization. 2. Guaranteed by design. Table 83. Temperature sensor calibration values Symbol Parameter Memory address TS_CAL1 TS ADC raw data acquired at temperature of 30 °C, VDDA= 3.3 V 0x1FFF 7A2C - 0x1FFF 7A2D TS_CAL2 TS ADC raw data acquired at temperature of 110 °C, VDDA= 3.3 V 0x1FFF 7A2E - 0x1FFF 7A2F Table 84. VBAT monitoring characteristics Symbol Parameter Min Typ Max Unit R Resistor bridge for VBAT -50- K Ω Q Ratio on VBAT measurement - 4 - Er(1) Error on Q –1 - +1 % TS_vbat(2)(2) ADC sampling time when reading the VBAT 1 mV accuracy 5- - µs 1. Guaranteed by design. 2. Shortest sampling time can be determined in the application by multiple iterations. Table 85. internal reference voltage Symbol Parameter Conditions Min Typ Max Unit VREFINT Internal reference voltage –40 °C < TA < +105 °C 1.18 1.21 1.24 V TS_vrefint(1) ADC sampling time when reading the internal reference voltage 10 - - µs VRERINT_s(2) Internal reference voltage spread over the temperature range VDD = 3V ± 10mV - 3 5 mV |
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